METHOD FOR PREPARING HIGH-PURITY INDIUM

    公开(公告)号:US20250075289A1

    公开(公告)日:2025-03-06

    申请号:US18805621

    申请日:2024-08-15

    Abstract: Provided is a method for preparing high-purity indium (In). The method for preparing the high-purity In includes: distilling refined In to obtain an In vapor-containing gas; and condensing the In vapor-containing gas to obtain the high-purity In; where the distilling is conducted at a temperature of 1,000° C. to 1,100° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa; and the condensing is conducted at a temperature of 700° C. to 900° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa. The In vapor-containing gas is obtained by controlling the temperature and vacuum degree of the distilling to evaporate In and impurities with a vapor pressure higher than the In. The temperature and vacuum degree of the condensing are adjusted to condense the In in the In vapor-containing gas.

Patent Agency Ranking