公开(公告)号：US20240224631A1

公开(公告)日：2024-07-04

申请号：US18529058

申请日：2023-12-05

Applicant: LG Display Co., Ltd.

Inventor： DeukHo Yeon ,  KiTae Kim ,  SunWook Ko

IPC: H10K59/126 ,  H10K59/121 ,  H10K59/122

CPC classification number: H10K59/126 ,  H10K59/1213 ,  H10K59/122

Abstract: A display device includes a substrate including an active area including a plurality of pixels and a non-active area located to surround the active area; a first thin film transistor disposed on the substrate and a second thin film transistor disposed to be spaced apart from the first thin film transistor; a planarization layer covering the first thin film transistor and the second thin film transistor; a first shielding layer disposed on the planarization layer; a light emitting element including an anode disposed on the planarization layer to be spaced apart from the first shielding layer; and a second shielding layer disposed on the anode. Accordingly, reliability of the display device can be improved by increasing a light shielding area in the display device.

公开(公告)号：US20240222463A1

公开(公告)日：2024-07-04

申请号：US18514318

申请日：2023-11-20

Applicant: LG Display Co., Ltd.

Inventor： DeukHo Yeon ,  SunWook Ko ,  KiTae Kim

IPC: H01L29/49 ,  H01L29/786 ,  H10K59/124

CPC classification number: H01L29/4908 ,  H01L29/78648 ,  H10K59/124 ,  H01L29/7869

Abstract: Disclosed is a thin film transistor and a display device including the same. The thin film transistor includes a first buffer layer; a lower gate electrode on the first buffer layer; a second buffer layer on the lower gate electrode; an active layer on the second buffer layer and including a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer on the active layer; and an upper gate electrode on the gate insulating layer. At least one of the upper gate electrode and the lower gate electrode includes a plurality of layers, and a work function of a layer adjacent to the active layer is greater than a work function of a layer far from the active layer, among the plurality of layers.

公开(公告)号：US11616095B2

公开(公告)日：2023-03-28

申请号：US17119221

申请日：2020-12-11

Applicant: LG DISPLAY CO., LTD.

Inventor： SunWook Ko ,  Hyunjin Kim ,  KumMi Oh ,  Seunghyo Ko

IPC: H01L27/15 ,  H01L33/62 ,  H01L29/786

Abstract: Embodiments of the disclosure are related to a display device, in a structure where an optical sensor is disposed on an opposite side of a side displaying an image and overlapping an active area of a display panel, as increasing a transmittance by implementing an area overlapping to the optical sensor as a low resolution area, a sensing function by the optical sensor located in the active area could be implemented. Furthermore, by implementing a number of a gate electrode or a width of a channel region or the like of a driving transistor disposed in the low resolution area to be different from those of a driving transistor disposed in a high resolution area, compensating a luminance of the low resolution area and preventing a deviation of a luminance between the low resolution area and the high resolution area can be achieved.

公开(公告)号：US12027570B2

公开(公告)日：2024-07-02

申请号：US18114033

申请日：2023-02-24

Applicant: LG DISPLAY CO., LTD.

Inventor： SunWook Ko ,  Hyunjin Kim ,  KumMi Oh ,  Seunghyo Ko

IPC: H01L27/15 ,  H01L29/786 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L29/78696 ,  H01L33/62

Abstract: A display device can include a display panel including a first area and a second area surrounded by the first area, where each of the first area and the second area includes a plurality of subpixels. The display device can further include a plurality of first driving thin film transistors disposed respectively in the plurality of subpixels positioned in the first area, and a plurality of second driving thin film transistors disposed respectively in the plurality of subpixels positioned in the second area. The second area can include a transparent area. For at least one of the plurality of the second driving thin film transistors, a length of the channel region of the second driving thin film transistor can be shorter than a length of the channel region of the first driving thin film transistor.

公开(公告)号：US11152511B2

公开(公告)日：2021-10-19

申请号：US16706640

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SunWook Ko ,  KumMi Oh

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: A thin-film transistor and a display panel are provided in which current characteristics of the thin-film transistor are improved by a dual gate electrode structure, and the output characteristics of the thin-film transistor are improved by dividing the top gate electrode (or bottom gate electrode) of the dual gate electrode into two electrodes and applying a back bias voltage to the top gate electrode adjacent to a source region. A high-resolution display panel or a transparent display panel is realized by increasing the aperture ratio (or transmittance) of the display panel using the highly integrated high-current device.