公开(公告)号：US11043516B2

公开(公告)日：2021-06-22

申请号：US16542773

申请日：2019-08-16

Applicant: LG DISPLAY CO., LTD.

Inventor： KumMi Oh ,  Minseong Yun ,  JaeHoon Park

IPC: H01L27/144 ,  H01L27/32 ,  G09G3/3258 ,  G06K9/00

Abstract: A display device can include a display panel including a plurality of gate lines, a plurality of data lines and a plurality of subpixels; at least one display driving transistor disposed in each of the plurality of subpixels; a sensing transistor disposed in each of the plurality of subpixels; a driver circuit configured to control the sensing transistor; and a sensing circuit electrically connected to a first electrode of the sensing transistor, in which a gate electrode of the at least one display driving transistor and a gate electrode of the sensing transistor are disposed on opposite sides of an active layer in a top-down direction.

公开(公告)号：US11616095B2

公开(公告)日：2023-03-28

申请号：US17119221

申请日：2020-12-11

Applicant: LG DISPLAY CO., LTD.

Inventor： SunWook Ko ,  Hyunjin Kim ,  KumMi Oh ,  Seunghyo Ko

IPC: H01L27/15 ,  H01L33/62 ,  H01L29/786

Abstract: Embodiments of the disclosure are related to a display device, in a structure where an optical sensor is disposed on an opposite side of a side displaying an image and overlapping an active area of a display panel, as increasing a transmittance by implementing an area overlapping to the optical sensor as a low resolution area, a sensing function by the optical sensor located in the active area could be implemented. Furthermore, by implementing a number of a gate electrode or a width of a channel region or the like of a driving transistor disposed in the low resolution area to be different from those of a driving transistor disposed in a high resolution area, compensating a luminance of the low resolution area and preventing a deviation of a luminance between the low resolution area and the high resolution area can be achieved.

公开(公告)号：US11367399B2

公开(公告)日：2022-06-21

申请号：US16523421

申请日：2019-07-26

Applicant: LG DISPLAY CO., LTD.

Inventor： Insang Jung ,  KumMi Oh

IPC: G09G3/3266 ,  H01L27/12 ,  G09G3/20 ,  H01L25/18 ,  G09G3/3233 ,  H01L27/32

Abstract: A display panel can include a first plate; a second plate disposed on the first plate; a first layer stack disposed between the first plate and the second plate; a first transistor disposed within the first layer stack; a second layer stack disposed on the second plate; and a second transistor disposed within the second layer stack, in which the first transistor is disposed in a location overlapping with an active area corresponding to an image display area.

公开(公告)号：US12027570B2

公开(公告)日：2024-07-02

申请号：US18114033

申请日：2023-02-24

Applicant: LG DISPLAY CO., LTD.

Inventor： SunWook Ko ,  Hyunjin Kim ,  KumMi Oh ,  Seunghyo Ko

IPC: H01L27/15 ,  H01L29/786 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L29/78696 ,  H01L33/62

Abstract: A display device can include a display panel including a first area and a second area surrounded by the first area, where each of the first area and the second area includes a plurality of subpixels. The display device can further include a plurality of first driving thin film transistors disposed respectively in the plurality of subpixels positioned in the first area, and a plurality of second driving thin film transistors disposed respectively in the plurality of subpixels positioned in the second area. The second area can include a transparent area. For at least one of the plurality of the second driving thin film transistors, a length of the channel region of the second driving thin film transistor can be shorter than a length of the channel region of the first driving thin film transistor.

公开(公告)号：US11152511B2

公开(公告)日：2021-10-19

申请号：US16706640

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SunWook Ko ,  KumMi Oh

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: A thin-film transistor and a display panel are provided in which current characteristics of the thin-film transistor are improved by a dual gate electrode structure, and the output characteristics of the thin-film transistor are improved by dividing the top gate electrode (or bottom gate electrode) of the dual gate electrode into two electrodes and applying a back bias voltage to the top gate electrode adjacent to a source region. A high-resolution display panel or a transparent display panel is realized by increasing the aperture ratio (or transmittance) of the display panel using the highly integrated high-current device.