DISPLAY DEVICE
    1.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240074253A1

    公开(公告)日:2024-02-29

    申请号:US18238714

    申请日:2023-08-28

    CPC classification number: H10K59/126

    Abstract: A display device may include a display area; a non-display area including a driver circuit area; a first transistor disposed in the display area, the first transistor including a first semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode; a second transistor disposed in the driver circuit area, the second transistor including a second semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode; and a first insulating film disposed between the second gate electrode and the second source electrode and between the second gate electrode and the second drain electrode; an anode electrode electrically connected to the first drain electrode; and a light-blocking layer overlapping the first semiconductor layer and disposed on the first insulating film. The light-blocking layer, the second source electrode, and the second drain electrode may be disposed on the same layer.

    DISPLAY DEVICE
    2.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240074236A1

    公开(公告)日:2024-02-29

    申请号:US18221191

    申请日:2023-07-12

    CPC classification number: H10K59/1213 H10K59/1216 H10K59/1315 H10K59/8792

    Abstract: A display device can include a first transistor disposed in a display area of a substrate, the first transistor including a first semiconductor layer, a first gate electrode, a first source electrode and a first drain electrode; a second transistor disposed a non-display area of the substrate, the second transistor including a second semiconductor layer, a second gate electrode, a second source electrode and a second drain electrode; and a first insulating layer disposed across the first oxide transistor and the second polycrystalline silicon transistor. Also, the display device can further include at least one capacitor disposed on the first insulating layer. Also, the first transistor can be an oxide transistor, the second transistor can be a polycrystalline silicon transistor, and the at least one capacitor can include a material configured to absorb hydrogen.

    DISPLAY APPARATUS
    3.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240055532A1

    公开(公告)日:2024-02-15

    申请号:US18362822

    申请日:2023-07-31

    CPC classification number: H01L29/7869 H01L29/78696 H01L29/41733

    Abstract: A display apparatus includes an oxide semiconductor layer on a substrate; a gate insulating film on the oxide semiconductor layer; a gate electrode on the gate insulating film; a first interlayer insulating film on the gate insulating film and the gate electrode; a second interlayer insulating film on the first interlayer insulating film; a source electrode connected to the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer, wherein the oxide semiconductor layer includes: a channel area overlapping the gate electrode; a source area connected to the source electrode; a drain area connected to the drain electrode; an intermediate source area between the channel and source areas; and an intermediate drain area between the channel and drain areas, wherein a hydrogen concentration of each of the intermediate source and drain areas is lower than that of each of the source and drain areas.

    LIGHT EMITTING DISPLAY APPARATUS
    4.
    发明公开

    公开(公告)号:US20240074265A1

    公开(公告)日:2024-02-29

    申请号:US18353807

    申请日:2023-07-17

    CPC classification number: H10K59/1315

    Abstract: Disclosed is a light emitting display device, including: a first thin film transistor including a first semiconductor pattern, a first gate electrode, a first source electrode, and a first drain electrode; a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode, and a second drain electrode; and a light emitting element layer electrically connected to the second thin film transistor, and the second thin film transistor may further include the second source electrode and an auxiliary metal layer contacting a lower portion of the second drain electrode.

    DISPLAY APPARATUS
    5.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240071315A1

    公开(公告)日:2024-02-29

    申请号:US18238782

    申请日:2023-08-28

    Abstract: A display apparatus includes a substrate including a display area and a non-display area; a gate line and a data line disposed on the substrate, wherein the gate line and the data line intersect each other; a plurality of light-emitting elements disposed on the gate line and the data line, wherein each of the plurality of light-emitting elements includes a first electrode, a light-emissive layer, and a second electrode; a first thin-film transistor and a second thin-film transistor disposed under each of the plurality of light-emitting elements; and a light-blocking layer disposed on the first thin-film transistor or the second thin-film transistor, wherein the light-blocking layer and the first electrode are disposed at the same vertical level, wherein the light-blocking layer overlaps at least one of the first thin-film transistor or the second thin-film transistor.

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