公开(公告)号：US20180204896A1

公开(公告)日：2018-07-19

申请号：US15923792

申请日：2018-03-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Jaesoo PARK ,  Dongchae SHIN

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L51/0097 ,  H01L2251/5338 ,  Y02E10/549

Abstract: A flexible display device according to an embodiment includes a flexible plate including a display area, a non-display area surrounding the display area, an edge bending area near the display area in the non-display area and a pad area extending from the edge bending area; a first thin film transistor in the display area on the flexible plate; a first line disposed in the edge bending area on the flexible plate; a first buffer layer covering the first line; a second line on the first buffer layer in the edge bending area; a second buffer layer covering the second line; a connecting electrode is electrically connected the first line and the second line in the edge bending area; and a plurality of trenches disposed at the edge bending area and penetrating the second buffer layer and the first buffer layer.

公开(公告)号：US20210183904A1

公开(公告)日：2021-06-17

申请号：US17109941

申请日：2020-12-02

Applicant: LG Display Co., Ltd.

Inventor： Sunghoon KIM ,  Dongchae SHIN ,  KyungMo SON

IPC: H01L27/12

Abstract: Embodiments of the disclosure are related to polyimide substrates and display devices, a plurality of intaglio patterns are formed on at least a portion of one surface of a polyimide substrate, a high transmissive filling is disposed inside the intaglio pattern, thus an overall transmittance of the polyimide substrate is enhanced. Furthermore, the filling having a certain range of a coefficient of thermal expansion is disposed in the intaglio pattern to maintain a heat resistance of the polyimide substrate, an element being required a high temperature process could be disposed on the polyimide substrate having an enhanced transmittance.

公开(公告)号：US20240074253A1

公开(公告)日：2024-02-29

申请号：US18238714

申请日：2023-08-28

Applicant: LG Display Co., Ltd.

Inventor： Sunyoung CHOI ,  Sangsoon NOH ,  Dongchae SHIN ,  Moonho PARK ,  Mijin JEONG

IPC: H10K59/126

CPC classification number: H10K59/126

Abstract: A display device may include a display area; a non-display area including a driver circuit area; a first transistor disposed in the display area, the first transistor including a first semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode; a second transistor disposed in the driver circuit area, the second transistor including a second semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode; and a first insulating film disposed between the second gate electrode and the second source electrode and between the second gate electrode and the second drain electrode; an anode electrode electrically connected to the first drain electrode; and a light-blocking layer overlapping the first semiconductor layer and disposed on the first insulating film. The light-blocking layer, the second source electrode, and the second drain electrode may be disposed on the same layer.

公开(公告)号：US20240074236A1

公开(公告)日：2024-02-29

申请号：US18221191

申请日：2023-07-12

Applicant: LG Display Co., Ltd

Inventor： Sunyoung CHOI ,  Dongchae SHIN ,  Sungjin LEE

IPC: H10K59/121 ,  H10K59/131 ,  H10K59/80

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/1315 ,  H10K59/8792

Abstract: A display device can include a first transistor disposed in a display area of a substrate, the first transistor including a first semiconductor layer, a first gate electrode, a first source electrode and a first drain electrode; a second transistor disposed a non-display area of the substrate, the second transistor including a second semiconductor layer, a second gate electrode, a second source electrode and a second drain electrode; and a first insulating layer disposed across the first oxide transistor and the second polycrystalline silicon transistor. Also, the display device can further include at least one capacitor disposed on the first insulating layer. Also, the first transistor can be an oxide transistor, the second transistor can be a polycrystalline silicon transistor, and the at least one capacitor can include a material configured to absorb hydrogen.

公开(公告)号：US20240055532A1

公开(公告)日：2024-02-15

申请号：US18362822

申请日：2023-07-31

Applicant: LG Display Co., Ltd.

Inventor： Sunyoung CHOI ,  Sangsoon NOH ,  Dongchae SHIN

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/78696 ,  H01L29/41733

Abstract: A display apparatus includes an oxide semiconductor layer on a substrate; a gate insulating film on the oxide semiconductor layer; a gate electrode on the gate insulating film; a first interlayer insulating film on the gate insulating film and the gate electrode; a second interlayer insulating film on the first interlayer insulating film; a source electrode connected to the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer, wherein the oxide semiconductor layer includes: a channel area overlapping the gate electrode; a source area connected to the source electrode; a drain area connected to the drain electrode; an intermediate source area between the channel and source areas; and an intermediate drain area between the channel and drain areas, wherein a hydrogen concentration of each of the intermediate source and drain areas is lower than that of each of the source and drain areas.

公开(公告)号：US20170162822A1

公开(公告)日：2017-06-08

申请号：US15365199

申请日：2016-11-30

Applicant: LG DISPLAY CO., LTD.

Inventor： Wonhoon PARK ,  Wonsang RYU ,  Daegyu JO ,  Youngkyu SONG ,  Dongchae SHIN ,  Seungeun PYO

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5237 ,  H01L27/3258 ,  H01L51/5246 ,  H01L2227/323 ,  H01L2251/566

Abstract: A display device and a method for manufacturing the same are disclosed. The display device includes a substrate including a display area having a plurality of subpixels and a bezel area around the display area; at least one insulating layer on the substrate and having a via hole which suppresses propagation of cracks in the bezel area.

公开(公告)号：US20170154936A1

公开(公告)日：2017-06-01

申请号：US15366725

申请日：2016-12-01

Applicant: LG DISPLAY CO., LTD.

Inventor： Daegyu JO ,  Wonsang RYU ,  Youngkyu SONG ,  Dongchae SHIN ,  Seungeun PYO

IPC: H01L27/32

CPC classification number: H01L27/3258 ,  G02F1/1362 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3276 ,  H01L27/3297 ,  H01L51/5253

Abstract: A display device is discussed. The display device according to an embodiment includes a substrate, a display region disposed over the substrate and comprising a plurality of subpixels, and a data pad part disposed in regions other than the display region. The data pad part comprises a data signal line extended from the display region, an insulating film disposed on the data signal line and insulating the data signal line, a data pad electrode disposed on the insulating film and connected to the data signal line through the via hole, and an insulating pattern configured to cover the via hole. The data pad electrode can include at least one electrode hole.

公开(公告)号：US20240074265A1

公开(公告)日：2024-02-29

申请号：US18353807

申请日：2023-07-17

Applicant: LG Display Co., Ltd.

Inventor： Mijin JEONG ,  Sangsoon ` NOH ,  Dongchae SHIN ,  Sunyoung CHOI ,  Moonho PARK

IPC: H10K59/131

CPC classification number: H10K59/1315

Abstract: Disclosed is a light emitting display device, including: a first thin film transistor including a first semiconductor pattern, a first gate electrode, a first source electrode, and a first drain electrode; a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode, and a second drain electrode; and a light emitting element layer electrically connected to the second thin film transistor, and the second thin film transistor may further include the second source electrode and an auxiliary metal layer contacting a lower portion of the second drain electrode.

公开(公告)号：US20240071315A1

公开(公告)日：2024-02-29

申请号：US18238782

申请日：2023-08-28

Applicant: LG Display Co., Ltd.

Inventor： Sunyoung CHOI ,  Dongchae SHIN ,  Mijin JEONG

IPC: G09G3/3266 ,  G09G3/3275 ,  H10K59/121 ,  H10K59/131 ,  H10K59/80

CPC classification number: G09G3/3266 ,  G09G3/3275 ,  H10K59/1213 ,  H10K59/131 ,  H10K59/8792 ,  G09G2320/0233 ,  G09G2330/021

Abstract: A display apparatus includes a substrate including a display area and a non-display area; a gate line and a data line disposed on the substrate, wherein the gate line and the data line intersect each other; a plurality of light-emitting elements disposed on the gate line and the data line, wherein each of the plurality of light-emitting elements includes a first electrode, a light-emissive layer, and a second electrode; a first thin-film transistor and a second thin-film transistor disposed under each of the plurality of light-emitting elements; and a light-blocking layer disposed on the first thin-film transistor or the second thin-film transistor, wherein the light-blocking layer and the first electrode are disposed at the same vertical level, wherein the light-blocking layer overlaps at least one of the first thin-film transistor or the second thin-film transistor.

公开(公告)号：US20240008309A1

公开(公告)日：2024-01-04

申请号：US18211757

申请日：2023-06-20

Applicant: LG Display Co., Ltd.

Inventor： MoonHo PARK ,  Sangsoon NOH ,  Dongchae SHIN ,  SunYoung CHOI ,  Mijin JEONG

IPC: H10K59/121 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K59/40 ,  H10K59/80 ,  G06F3/041 ,  G06F3/044

CPC classification number: H10K59/1213 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  G09G3/3233 ,  H10K59/40 ,  H10K59/873 ,  G06F3/0412 ,  G06F3/0446 ,  H10K59/131

Abstract: A thin film transistor, in one or more examples, includes a semiconductor layer, an upper gate electrode overlapped with the semiconductor layer, an upper insulating layer disposed between the semiconductor layer and the upper gate electrode, a first lower gate electrode overlapped with the semiconductor layer, a second lower gate electrode disposed between the semiconductor layer and the first lower gate electrode, overlapped with the semiconductor layer, and configured to have a width smaller than that of the upper gate electrode, a first lower insulating layer disposed between the first lower gate electrode and the second lower gate electrode, and a second lower insulating layer disposed between the second lower gate electrode and the semiconductor layer. A display apparatus including a thin film transistor is also disclosed.