公开(公告)号：US20200152132A1

公开(公告)日：2020-05-14

申请号：US16532581

申请日：2019-08-06

Applicant: LG Display Co., Ltd.

Inventor： JaeHyun KIM ,  KyungMo SON ,  Mijin JEONG

IPC: G09G3/3266 ,  H01L27/32

Abstract: A display device comprises a display panel in which a plurality of subpixels are disposed, wherein the plurality of subpixels include a first subpixel, a second subpixel, a third subpixel, and a fourth subpixel that are sequentially disposed in a single row or column; a gate driver disposed on the display panel and supplying a scanning signal to the plurality of subpixels; a first island pattern disposed in each area of the first subpixel and the third subpixel; a second island pattern disposed in each area of the second subpixel and the fourth subpixel; a first connection line electrically connecting the first island pattern disposed in the area of the first subpixel and the first island pattern disposed in the area of the third subpixel; and a second connection line electrically connecting second island pattern disposed in the area of the second subpixel and the second island pattern disposed in the area of the fourth subpixel, wherein the first connection line and the second connection line are electrically disconnected from each other, and the gate driver independently drives the first connection line and the second connection line.

公开(公告)号：US20150243688A1

公开(公告)日：2015-08-27

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

Abstract translation: 提供薄膜晶体管基板和使用其的显示器。 显示器包括：第一区域，第二区域，设置在第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极， 以及第一漏极，设置在所述第二区的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅极，所述第二栅电极上的氧化物半导体层，第二源极和第二漏极， 显示装置的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅电极和第二栅电极之上的氧化物层。

公开(公告)号：US20240074253A1

公开(公告)日：2024-02-29

申请号：US18238714

申请日：2023-08-28

Applicant: LG Display Co., Ltd.

Inventor： Sunyoung CHOI ,  Sangsoon NOH ,  Dongchae SHIN ,  Moonho PARK ,  Mijin JEONG

IPC: H10K59/126

CPC classification number: H10K59/126

Abstract: A display device may include a display area; a non-display area including a driver circuit area; a first transistor disposed in the display area, the first transistor including a first semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode; a second transistor disposed in the driver circuit area, the second transistor including a second semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode; and a first insulating film disposed between the second gate electrode and the second source electrode and between the second gate electrode and the second drain electrode; an anode electrode electrically connected to the first drain electrode; and a light-blocking layer overlapping the first semiconductor layer and disposed on the first insulating film. The light-blocking layer, the second source electrode, and the second drain electrode may be disposed on the same layer.

公开(公告)号：US20240074265A1

公开(公告)日：2024-02-29

申请号：US18353807

申请日：2023-07-17

Applicant: LG Display Co., Ltd.

Inventor： Mijin JEONG ,  Sangsoon ` NOH ,  Dongchae SHIN ,  Sunyoung CHOI ,  Moonho PARK

IPC: H10K59/131

CPC classification number: H10K59/1315

Abstract: Disclosed is a light emitting display device, including: a first thin film transistor including a first semiconductor pattern, a first gate electrode, a first source electrode, and a first drain electrode; a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode, and a second drain electrode; and a light emitting element layer electrically connected to the second thin film transistor, and the second thin film transistor may further include the second source electrode and an auxiliary metal layer contacting a lower portion of the second drain electrode.

公开(公告)号：US20240071315A1

公开(公告)日：2024-02-29

申请号：US18238782

申请日：2023-08-28

Applicant: LG Display Co., Ltd.

Inventor： Sunyoung CHOI ,  Dongchae SHIN ,  Mijin JEONG

IPC: G09G3/3266 ,  G09G3/3275 ,  H10K59/121 ,  H10K59/131 ,  H10K59/80

CPC classification number: G09G3/3266 ,  G09G3/3275 ,  H10K59/1213 ,  H10K59/131 ,  H10K59/8792 ,  G09G2320/0233 ,  G09G2330/021

Abstract: A display apparatus includes a substrate including a display area and a non-display area; a gate line and a data line disposed on the substrate, wherein the gate line and the data line intersect each other; a plurality of light-emitting elements disposed on the gate line and the data line, wherein each of the plurality of light-emitting elements includes a first electrode, a light-emissive layer, and a second electrode; a first thin-film transistor and a second thin-film transistor disposed under each of the plurality of light-emitting elements; and a light-blocking layer disposed on the first thin-film transistor or the second thin-film transistor, wherein the light-blocking layer and the first electrode are disposed at the same vertical level, wherein the light-blocking layer overlaps at least one of the first thin-film transistor or the second thin-film transistor.

公开(公告)号：US20240008309A1

公开(公告)日：2024-01-04

申请号：US18211757

申请日：2023-06-20

Applicant: LG Display Co., Ltd.

Inventor： MoonHo PARK ,  Sangsoon NOH ,  Dongchae SHIN ,  SunYoung CHOI ,  Mijin JEONG

IPC: H10K59/121 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131 ,  H10K59/40 ,  H10K59/80 ,  G06F3/041 ,  G06F3/044

CPC classification number: H10K59/1213 ,  H10K59/123 ,  H10K59/124 ,  H10K59/126 ,  G09G3/3233 ,  H10K59/40 ,  H10K59/873 ,  G06F3/0412 ,  G06F3/0446 ,  H10K59/131

Abstract: A thin film transistor, in one or more examples, includes a semiconductor layer, an upper gate electrode overlapped with the semiconductor layer, an upper insulating layer disposed between the semiconductor layer and the upper gate electrode, a first lower gate electrode overlapped with the semiconductor layer, a second lower gate electrode disposed between the semiconductor layer and the first lower gate electrode, overlapped with the semiconductor layer, and configured to have a width smaller than that of the upper gate electrode, a first lower insulating layer disposed between the first lower gate electrode and the second lower gate electrode, and a second lower insulating layer disposed between the second lower gate electrode and the semiconductor layer. A display apparatus including a thin film transistor is also disclosed.

公开(公告)号：US20150243685A1

公开(公告)日：2015-08-27

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 薄膜晶体管基板包括：基板，设置在基板的第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极 以及第一漏电极，设置在所述基板的第二区域的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和 第二漏电极，设置在基板的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅极电极和第二栅电极之上的氧化物层， 氧化物半导体层。