公开(公告)号：US11348963B2

公开(公告)日：2022-05-31

申请号：US16666265

申请日：2019-10-28

Applicant: LG Display Co., Ltd.

Inventor： Jungjune Kim ,  Youngjin Yi ,  Younghun Han ,  Youngyoung Chang

IPC: G01T1/24 ,  H01L27/146 ,  G01T1/20

Abstract: The present disclosure relates to a digital X-ray detector and a thin-film transistor array substrate for the same. Disclosed is a thin-film transistor array substrate for a digital X-ray detector in which deterioration of electrical characteristics of a thin-film transistors made of an oxide semiconductor may be reduced or minimized and aging of a PIN diode caused by external moisture may be reduced or minimized. Further, disclosed is a digital X-ray detector including the array substrate. To this end, the array substrate includes a second protective layer having a variety of patterns so as to cover at least a portion of the PIN diode but not to cover the thin-film transistor. The second protective layer includes SiNx. Thus, a de-hydrogenation path from the thin-film transistor may be secured and an external moisture barrier effect for the PIN diode may be achieved.

公开(公告)号：US10802163B2

公开(公告)日：2020-10-13

申请号：US16216978

申请日：2018-12-11

Applicant: LG Display Co., Ltd.

Inventor： Youngjin Yi ,  Youngyoung Chang ,  Jinpil Kim ,  Hanseok Lee ,  Hyeji Jeon ,  Younghun Han

IPC: G01T1/24 ,  H01L27/146

Abstract: A substrate for a digital X-ray detector configured to sense an X-ray signal, a detector including the same, and a manufacturing method thereof. According to an embodiment of the present disclosure, the substrate for an X-ray detector includes an interlayer dielectric layer arranged on a thin film transistor, a first passivation layer and a second passivation layer arranged on the interlayer dielectric layer, and a hydrogen blocking layer arranged on at least one of the first passivation layer and the second passivation layer in a transistor region corresponding to the thin film transistor.

公开(公告)号：US20240081098A1

公开(公告)日：2024-03-07

申请号：US18240968

申请日：2023-08-31

Applicant: LG Display Co., Ltd.

Inventor： Younghun Han ,  Jihun Lee

IPC: H10K59/121 ,  H10K59/126

CPC classification number: H10K59/1213 ,  H10K59/126

Abstract: The present disclosure provides a thin film transistor, an electroluminescent display device and a driving transistor. A thin film transistor according to an exemplary embodiment of the present disclosure includes a semiconductor layer, a first insulating layer disposed on the semiconductor layer, two or more first gate electrodes disposed on the first insulating layer and separated from each other, a second insulating layer disposed on the first gate electrodes, a source electrode and a drain electrode disposed on the second insulating layer and respectively electrically connected to a source region and a drain region of the semiconductor layer and a second gate electrode disposed above the first gate electrodes, a channel region may be configured between the source region and the drain region. As a result, it becomes possible to increase subthreshold swing (SS) value, and thus, it becomes possible to improve low gradation spots without increasing a bezel width.

公开(公告)号：US20230200185A1

公开(公告)日：2023-06-22

申请号：US17993100

申请日：2022-11-23

Applicant: LG Display Co., Ltd.

Inventor： Eunhyung Lee ,  Younghun Han ,  KwangJong Kim ,  Ji Hun Lee

IPC: H10K59/65 ,  H10K50/858 ,  H10K59/35 ,  H10K59/131

CPC classification number: H01L27/3234 ,  H01L51/5275 ,  H01L27/3218 ,  H01L27/3276

Abstract: The present disclosure relates to a display device including a first capping layer and enabling a first optical area to have a higher transmittance by designing the first optical area such that at least one of thicknesses and refractive indexes of respective portions of the first capping layer in the first optical area and the normal area is different from each other.