公开(公告)号：US11335706B2

公开(公告)日：2022-05-17

申请号：US16653609

申请日：2019-10-15

Applicant: LG Display Co., Ltd.

Inventor： Hanseok Lee ,  Hyeji Jeon ,  Youngyoung Chang

IPC: H01L27/12 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/115 ,  H01L31/105

Abstract: Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same, in which a photo-sensitivity is improved by increasing a fill factor, a stability of the PIN diode is improved, and generation of parasitic capacitance is reduced or minimized. In one embodiment, the PIN diode maximally extends so that electrodes and contact holes of the thin-film transistor is disposed inside the PIN diode. A planarization layer of organic material is present between the electrodes or wirings. Further, a light receiving region of the PIN diode is increased or maximized by positioning the bias line to overlap the data line or the gate line so as not to overlap with the PIN diode.

公开(公告)号：US09786697B2

公开(公告)日：2017-10-10

申请号：US15182265

申请日：2016-06-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Sohyung Lee ,  Youngyoung Chang ,  Kwonshik Park ,  Mincheol Kim ,  Jeongsuk Yang

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/13 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1343

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3265

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.

公开(公告)号：US11348963B2

公开(公告)日：2022-05-31

申请号：US16666265

申请日：2019-10-28

Applicant: LG Display Co., Ltd.

Inventor： Jungjune Kim ,  Youngjin Yi ,  Younghun Han ,  Youngyoung Chang

IPC: G01T1/24 ,  H01L27/146 ,  G01T1/20

Abstract: The present disclosure relates to a digital X-ray detector and a thin-film transistor array substrate for the same. Disclosed is a thin-film transistor array substrate for a digital X-ray detector in which deterioration of electrical characteristics of a thin-film transistors made of an oxide semiconductor may be reduced or minimized and aging of a PIN diode caused by external moisture may be reduced or minimized. Further, disclosed is a digital X-ray detector including the array substrate. To this end, the array substrate includes a second protective layer having a variety of patterns so as to cover at least a portion of the PIN diode but not to cover the thin-film transistor. The second protective layer includes SiNx. Thus, a de-hydrogenation path from the thin-film transistor may be secured and an external moisture barrier effect for the PIN diode may be achieved.

公开(公告)号：US10163944B2

公开(公告)日：2018-12-25

申请号：US15699126

申请日：2017-09-08

Applicant: LG DISPLAY CO., LTD.

Inventor： Sohyung Lee ,  Youngyoung Chang ,  Kwonshik Park ,  Mincheol Kim ,  Jeongsuk Yang

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/13 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1343

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.

公开(公告)号：US10802163B2

公开(公告)日：2020-10-13

申请号：US16216978

申请日：2018-12-11

Applicant: LG Display Co., Ltd.

Inventor： Youngjin Yi ,  Youngyoung Chang ,  Jinpil Kim ,  Hanseok Lee ,  Hyeji Jeon ,  Younghun Han

IPC: G01T1/24 ,  H01L27/146

Abstract: A substrate for a digital X-ray detector configured to sense an X-ray signal, a detector including the same, and a manufacturing method thereof. According to an embodiment of the present disclosure, the substrate for an X-ray detector includes an interlayer dielectric layer arranged on a thin film transistor, a first passivation layer and a second passivation layer arranged on the interlayer dielectric layer, and a hydrogen blocking layer arranged on at least one of the first passivation layer and the second passivation layer in a transistor region corresponding to the thin film transistor.

公开(公告)号：US20180012913A1

公开(公告)日：2018-01-11

申请号：US15699126

申请日：2017-09-08

Applicant: LG DISPLAY CO., LTD.

Inventor： Sohyung Lee ,  Youngyoung Chang ,  Kwonshik Park ,  Mincheol Kim ,  Jeongsuk Yang

IPC: H01L27/12 ,  G02F1/1362 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/322 ,  H01L27/3265

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.