Abstract:
The present disclosure relates to a digital X-ray detector, which includes a base substrate; a metal layer disposed on a bottom face of the base substrate; an elements-array disposed on a top face of the base substrate; a ground electrode disposed on a top face of the base substrate and electrically connected to the elements-array; a scintillator layer disposed on the elements-array; and a reflective plate disposed on the scintillator layer. Thus, a static-electricity discharge path along which static-electricity from the reflective plate moves through the ground electrode to the metal layer may be secured. This may increase or maximize an effective ground region, such that the static-electricity generated from the top and bottom of the digital X-ray detector can be more efficiently discharged out.
Abstract:
An array substrate for a liquid crystal display and a method for manufacturing the same are disclosed. The array substrate for a liquid crystal display includes a source electrode and a drain electrode and an organic insulating film positioned on the source electrode and the drain electrode. The organic insulating layer includes a first contact hole exposing the drain electrode, and having a stepped level difference formed on the sloping surface of the first contact hole.
Abstract:
A panel for a flexible digital X-ray detector and a method for manufacturing the same are disclosed. Embodiments of the flexible digital X-ray detector reduce device characteristic deterioration caused by X-ray exposure, increase flexibility to the panel by reducing a thickness of the panel yet provide rigidity to maintain the shape of the panel, and reduce residual impurities during a Laser Lift Off (LLO) process. The panel can include a multi-buffer layer in which a silicon oxide (SiOx) layer and a silicon nitride (SiNx) layer are alternately stacked, and a device array layer and a scintillator layer that are disposed over the multi-buffer layer. During the LLO process, the method for manufacturing the panel includes increasing the hydrogen content using a sacrificial layer including an amorphous silicon (a-Si) layer and a silicon nitride (SiNx) layer disposed at both surfaces of the a-Si layer, such that the amount of residual impurities in the sacrificial layer can be reduced.
Abstract:
The present disclosure relates to a digital X-ray detector, which includes a base substrate; a metal layer disposed on a bottom face of the base substrate; an elements-array disposed on a top face of the base substrate; a ground electrode disposed on a top face of the base substrate and electrically connected to the elements-array; a scintillator layer disposed on the elements-array; and a reflective plate disposed on the scintillator layer. Thus, a static-electricity discharge path along which static-electricity from the reflective plate moves through the ground electrode to the metal layer may be secured. This may increase or maximize an effective ground region, such that the static-electricity generated from the top and bottom of the digital X-ray detector can be more efficiently discharged out.
Abstract:
An array substrate for a liquid crystal display and a method for manufacturing the same are disclosed. The array substrate for a liquid crystal display includes a source electrode and a drain electrode and an organic insulating film positioned on the source electrode and the drain electrode. The organic insulating layer includes a first contact hole exposing the drain electrode, and having a stepped level difference formed on the sloping surface of the first contact hole.
Abstract:
A substrate for a digital X-ray detector configured to sense an X-ray signal, a detector including the same, and a manufacturing method thereof. According to an embodiment of the present disclosure, the substrate for an X-ray detector includes an interlayer dielectric layer arranged on a thin film transistor, a first passivation layer and a second passivation layer arranged on the interlayer dielectric layer, and a hydrogen blocking layer arranged on at least one of the first passivation layer and the second passivation layer in a transistor region corresponding to the thin film transistor.