Solar cell and method for manufacturing the same

    公开(公告)号:US10749069B2

    公开(公告)日:2020-08-18

    申请号:US16250681

    申请日:2019-01-17

    Abstract: A method for manufacturing a solar cell, includes forming an oxide layer on first surface of a single crystalline silicon substrate; forming a poly crystalline silicon layer doped with a first dopant having a first conductive type on the oxide layer; diffusing a second dopant having a second conductive type opposite to the first conductive type into a second surface of the single crystalline silicon substrate thereby forming a diffusion region; forming a first passivation layer on the poly crystalline silicon layer; forming a second passivation layer on the diffusion region; forming a first electrode connected to the poly crystalline silicon layer by printing a first paste on the first passivation layer and firing through; forming a second electrode connected to the diffusion region by printing a second paste on the second passivation layer and firing through.

    Solar cell and method for manufacturing the same

    公开(公告)号:US10714654B2

    公开(公告)日:2020-07-14

    申请号:US16250694

    申请日:2019-01-17

    Abstract: A solar cell includes a semiconductor substrate containing impurities of a first conductive type; a tunnel layer positioned on the semiconductor substrate; an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type; a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type; a first electrode connected to the semiconductor substrate; and a second electrode configured to pass through the dopant layer, and connected to the emitter region.

    Solar cell and method for manufacturing the same

    公开(公告)号:US10224453B2

    公开(公告)日:2019-03-05

    申请号:US14931591

    申请日:2015-11-03

    Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the semiconductor substrate, an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type, a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type, a first electrode connected to the semiconductor substrate, and a second electrode configured to pass through the dopant layer and connected to the emitter region.

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