公开(公告)号：US10658529B2

公开(公告)日：2020-05-19

申请号：US14297330

申请日：2014-06-05

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsun Ji ,  Seungjik Lee ,  Sehwon Ahn

IPC: H01L31/0224 ,  H01L21/30 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/0747

Abstract: A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.