公开(公告)号：US4126931A

公开(公告)日：1978-11-28

申请号：US786385

申请日：1977-04-11

申请人： Luciano Gandolfi ,  Rudolf Rocak

发明人： Luciano Gandolfi ,  Rudolf Rocak

IPC分类号： H01L21/304 ,  H01L21/312 ,  H01L21/56 ,  H01L23/31 ,  H01L29/06 ,  B01J17/00

CPC分类号： H01L29/0607 ,  H01L21/56 ,  H01L23/3178 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3025

摘要： Several junction-type semiconductor chips, specifically NPN transistors, are simultaneously produced by mesa technique from a semiconductor wafer by adhering to one major surface thereo a supporting structure including a bonding layer of wax, similarly adhering a protective layer of a relatively soft material -- likewise a wax -- to the opposite major wafer surface, and dividing the wafer into chips temporarily held together by the supporting structure. The last-mentioned step involves a splitting of the protective layer into isolated sections by making incisions in that layer cutting into the underlying wafer body, followed by an erosion of the semiconductor material of that body by an etching solution to form channels which extend completely across the wafer and terminate at the supporting structure, these channels being widened in the immediate vicinity of the protective layer to form undercuts. A continuous passivating film is applied, e.g. by vapor deposition, to the channel walls and to the several isolated sections of the protective wax layer adhering to the exposed chip faces, the film enveloping projecting edge portions of these sections which extend partly across the channel entrances. After these edge portions are mechanically cut off, film segments adhering to the isolated wax-layer sections can be removed by dissolving the wax; concurrent dissolution of the bonding layer of the supporting structure removes that structure from the chips which then remain interconnected only by parts of the passivating film bridging the lateral channel walls.

摘要翻译： 几个结型半导体芯片，特别是NPN晶体管，通过台式技术从半导体晶片通过粘附在其一个主表面上同时由包括蜡的粘结层的支撑结构产生，类似地粘附相对柔软材料的保护层 - 同样地 蜡 - 到相对的主要晶片表面，并且将晶片分成由支撑结构暂时保持在一起的芯片。 最后提到的步骤涉及通过在该层切割入下面的晶片体中的切口将保护层分离成隔离部分，然后通过蚀刻溶液侵蚀该主体的半导体材料，以形成完全延伸的通道 晶片并且终止于支撑结构，这些通道在保护层附近被加宽以形成底切。 连续钝化膜，例如， 通过气相沉积到粘附到暴露的芯片表面的保护性蜡层的通道壁和几个隔离部分，这些部分的薄膜包围突出边缘部分部分延伸穿过通道入口。 在这些边缘部分被机械切割之后，粘附到隔离的蜡层部分的膜段可以通过溶解蜡来除去; 支撑结构的粘合层的同时溶解从芯片中去除了这种结构，然后这些结构仅通过桥接横向通道壁的部分钝化膜保持互连。