公开(公告)号：US11955306B2

公开(公告)日：2024-04-09

申请号：US17045463

申请日：2019-04-04

Applicant: MICRO-X LIMITED

Inventor： Robert C. Sheehy ,  Brian Gonzales ,  Peter Yaron ,  Anthony Skeats ,  Steven Trewartha ,  Susanne Sahlos ,  Gandalf Du Preez

IPC: H01J35/06 ,  H01J9/02 ,  B82Y15/00 ,  B82Y40/00 ,  C01B32/158

CPC classification number: H01J35/065 ,  C01B32/158 ,  H01J9/025 ,  B82Y15/00 ,  B82Y40/00 ,  H01J2201/30469

Abstract: The present invention relates to large area field emission devices based on the incorporation of macroscopic, microscopic, and nanoscopic field enhancement features and a designed forced current sharing matrix layer to enable a stable high-current density long-life field emission device. The present invention pertains to a wide range of field emission sources and is not limited to a specific field emission technology. The invention is described as an X-ray electron source but can be applied to any application requiring a high current density electron source.

公开(公告)号：US12249477B2

公开(公告)日：2025-03-11

申请号：US18623938

申请日：2024-04-01

Applicant: MICRO-X LIMITED

Inventor： Robert C. Sheehy ,  Brian Gonzales ,  Peter Yaron ,  Anthony Skeats ,  Steven Trewartha ,  Susanne Sahlos ,  Gandalf Du Preez

IPC: H01J35/06 ,  B82Y15/00 ,  B82Y40/00 ,  C01B32/158 ,  H01J9/02

Abstract: The present invention relates to large area field emission devices based on the incorporation of macroscopic, microscopic, and nanoscopic field enhancement features and a designed forced current sharing matrix layer to enable a stable high-current density long-life field emission device. The present invention pertains to a wide range of field emission sources and is not limited to a specific field emission technology. The invention is described as an X-ray electron source but can be applied to any application requiring a high current density electron source.