公开(公告)号：US20180351096A1

公开(公告)日：2018-12-06

申请号：US16039707

申请日：2018-07-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： SWAPNIL A. LENGADE ,  JOHN M. MELDRIM ,  ANDREA GOTTI

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

公开(公告)号：US20180331286A1

公开(公告)日：2018-11-15

申请号：US16040521

申请日：2018-07-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  JOHN M. MELDRIM ,  ANDREA GOTTI

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

公开(公告)号：US20160005967A1

公开(公告)日：2016-01-07

申请号：US14857369

申请日：2015-09-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： SWAPNIL A. LENGADE ,  JOHN M. MELDRIM ,  ANDREA GOTTI

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

Abstract translation: 公开了具有导电阻挡材料的相变存储单元电极的制造方法和制造方法。 在一个实例中，装置包括与第一硫族化物结构堆叠在一起的第一硫族化物结构和第二硫族化物结构。 第一电极部分耦合到第一硫族化物结构，并且第二电极部分耦合到第二硫族化物结构。 导电阻挡材料设置在第一和第二电极部分之间。