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1.发明授权Forming source/drain zones with a dielectric plug over an isolation region between active regions 有权在有源区域之间的隔离区域上形成具有介电插塞的源极/漏极区域公开(公告)号：US09530683B2
公开(公告)日：2016-12-27
申请号：US14534454
申请日：2014-11-06
Applicant: MICRON TECHNOLOGY, INC.
Inventor： John Hopkins , James Matthew , Jie Sun , Gordon Haller
IPC: H01L21/336 , H01L21/762 , H01L27/115
CPC classification number: H01L21/76224 , H01L27/11524 , H01L27/1157
Abstract: An embodiment includes forming an isolation region between first and second active regions in a semiconductor, forming an opening between the first and second active regions by removing a portion of the isolation region, and forming a dielectric plug within the opening so that the dielectric plug is between the first and second active regions and so that a portion of the dielectric plug extends below upper surfaces of the first and second active regions. The dielectric plug may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.
Abstract translation: 一个实施例包括在半导体中在第一和第二有源区之间形成隔离区，通过去除隔离区的一部分形成第一和第二有源区之间的开口，以及在该开口内形成电介质塞， 在第一和第二有源区之间并且使得电介质塞的一部分延伸到第一和第二有源区的上表面之下。 电介质插塞可以由对于特定的各向同性的去除化学物质具有比隔离区域的电介质材料更低的去除速率的电介质材料形成。
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2.发明申请Forming Source/Drain Zones with a Delectric Plug Over an Isolation Region Between Active Regions 有权在活动区域之间的隔离区域形成带有电插头的源/排水区公开(公告)号：US20150064871A1
公开(公告)日：2015-03-05
申请号：US14534454
申请日：2014-11-06
Applicant: MICRON TECHNOLOGY, INC.
Inventor： John Hopkins , James Matthew , Jie Sun , Gordon Haller
IPC: H01L21/762 , H01L27/115
CPC classification number: H01L21/76224 , H01L27/11524 , H01L27/1157
Abstract: An embodiment includes forming an isolation region between first and second active regions in a semiconductor, forming an opening between the first and second active regions by removing a portion of the isolation region, and forming a dielectric plug within the opening so that the dielectric plug is between the first and second active regions and so that a portion of the dielectric plug extends below upper surfaces of the first and second active regions. The dielectric plug may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.
Abstract translation: 一个实施例包括在半导体中在第一和第二有源区之间形成隔离区，通过去除隔离区的一部分形成第一和第二有源区之间的开口，以及在该开口内形成电介质塞， 在第一和第二有源区之间并且使得电介质塞的一部分延伸到第一和第二有源区的上表面之下。 电介质插塞可以由对于特定的各向同性的去除化学物质具有比隔离区域的电介质材料更低的去除速率的电介质材料形成。
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