公开(公告)号：US20230041949A1

公开(公告)日：2023-02-09

申请号：US17394850

申请日：2021-08-05

Applicant: Macronix International Co., Ltd.

Inventor： Che-Ping CHEN ,  Ya-Jui LEE

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26

Abstract: A memory controller receives a command to program information to a memory storage array controlled by the memory controller. The memory controller determines a target memory state to store the information, and a target threshold voltage level corresponding to the target memory state. Based at least on the target memory state, the memory controller determines one or more program pulses for a pre-program cycle, including voltage levels for the one or more program pulses based at least on the target threshold voltage level. The memory controller selects a memory location in the memory storage array to program the information, and pre-programs the selected memory location by applying the one or more program pulses at respective voltage levels, the one or more program pulses applied without program verify operations. Following the pre-programming, the memory controller programs the information to the selected memory location.

公开(公告)号：US20250029667A1

公开(公告)日：2025-01-23

申请号：US18906735

申请日：2024-10-04

Applicant: Macronix International Co., Ltd.

Inventor： Che-Ping CHEN ,  Ya-Jui Lee

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26

Abstract: A memory controller receives a command to program information to a memory storage array controlled by the memory controller. The memory controller determines a target memory state to store the information, and a target threshold voltage level corresponding to the target memory state. Based at least on the target memory state, the memory controller determines one or more program pulses for a pre-program cycle, including voltage levels for the one or more program pulses based at least on the target threshold voltage level. The memory controller selects a memory location in the memory storage array to program the information, and pre-programs the selected memory location by applying the one or more program pulses at respective voltage levels, the one or more program pulses applied without program verify operations. Following the pre-programming, the memory controller programs the information to the selected memory location.

公开(公告)号：US20250029666A1

公开(公告)日：2025-01-23

申请号：US18356297

申请日：2023-07-21

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Che-Ping CHEN ,  Ya-Jui LEE ,  Yu-Hung HUANG

IPC: G11C16/34

Abstract: Provided are a memory device and a pre-charge method for a memory device. The pre-charge method includes: applying a plurality of independently-controlled pre-charge voltages to a plurality of turned-on word lines, wherein the plurality of pre-charge voltages are selected among a plurality of reference pre-charge voltages; and applying a plurality of turned-off voltages to a plurality of turned-off word lines. On a predetermined direction, a target turned-on word line among the plurality of turned-on word lines is adjacent to a next adjacent target turned-off word line among the plurality of turned-off word lines; and a voltage difference from the target turned-on word line toward the next adjacent target turned-off word line is smaller than a predetermined reference voltage difference.