公开(公告)号：US07803230B2

公开(公告)日：2010-09-28

申请号：US10593560

申请日：2005-04-05

申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置 由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

公开(公告)号：US20070175501A1

公开(公告)日：2007-08-02

申请号：US10593560

申请日：2005-04-05

申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。 由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

公开(公告)号：US07416632B2

公开(公告)日：2008-08-26

申请号：US10488406

申请日：2002-08-28

申请人： Takehiko Orii ,  Masaru Amai

发明人： Takehiko Orii ,  Masaru Amai

IPC分类号： C23F1/00

CPC分类号： H01L21/67248 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate.A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W.

公开(公告)号：US07329616B2

公开(公告)日：2008-02-12

申请号：US11327310

申请日：2006-01-09

申请人： Takehiko Orii ,  Masaru Amai

发明人： Takehiko Orii ,  Masaru Amai

IPC分类号： H01L21/00

CPC分类号： H01L21/67248 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate.A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其中当在基板的前侧表面上形成氧化膜时，可以以均匀的厚度形成比常规膜更薄的氧化物膜。 一种用于通过输送处理液来处理衬底（W）的衬底处理设备（12）包括：温度调节器（133），用于调节所述处理液体的温度; 和底板温度调节器（115），以调节放置在所述衬底W的背面表面附近的底板（77）的温度。

公开(公告)号：US20060160368A1

公开(公告)日：2006-07-20

申请号：US11327310

申请日：2006-01-09

申请人： Takehiko Orii ,  Masaru Amai

发明人： Takehiko Orii ,  Masaru Amai

IPC分类号： H01L21/461

CPC分类号： H01L21/67248 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate. A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其中当在基板的前侧表面上形成氧化膜时，可以以均匀的厚度形成比常规膜更薄的氧化物膜。 一种用于通过输送处理液来处理衬底（W）的衬底处理设备（12）包括：温度调节器（133），用于调节所述处理液体的温度; 和底板温度调节器（115），以调节放置在所述衬底W的背面表面附近的底板（77）的温度。

公开(公告)号：US07063094B2

公开(公告)日：2006-06-20

申请号：US10223686

申请日：2002-08-20

申请人： Masaru Amai ,  Masahiro Mukoyama ,  Takayuki Toshima

发明人： Masaru Amai ,  Masahiro Mukoyama ,  Takayuki Toshima

IPC分类号： B08B9/02

CPC分类号： H01L21/67051 ,  B08B3/04 ,  Y10S134/902

摘要： A substrate processing apparatus includes a substrate processing part 46 for processing a substrate by a processing liquid and a processing-liquid recovery path 137 allowing of a passage of the processing liquid discharged from the substrate processing part 46. The processing-liquid recovery path 137 is provided with foreign substance removal lines 181, 182 including filters 200, 201 for removing an foreign substance from the processing liquid and cleaners 201, 211 for cleaning the filters 200, 201 respectively. With this constitution, it is possible to cancel the blocking of foreign substances in pipes etc. and also possible to lengthen the life span of the filters.

摘要翻译： 基板处理装置包括用于通过处理液处理基板的基板处理部46和允许从基板处理部46排出的处理液的通过的处理液回收路径137。 处理液回收路径137设置有异物去除管线181,182，其包括用于从处理液中除去异物的过滤器200,201以及分别用于清洁过滤器200,201的清洁器201,211。 通过这种结构，可以消除管等中的异物的堵塞，并且也可以延长过滤器的使用寿命。

公开(公告)号：US20060196531A1

公开(公告)日：2006-09-07

申请号：US11413150

申请日：2006-04-28

申请人： Masaru Amai ,  Masahiro Mukoyama ,  Takayuki Toshima

发明人： Masaru Amai ,  Masahiro Mukoyama ,  Takayuki Toshima

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  B08B3/04 ,  Y10S134/902

摘要： A substrate processing apparatus includes a substrate processing part 46 for processing a substrate by a processing liquid and a processing-liquid recovery path 137 allowing of a passage of the processing liquid discharged from the substrate processing part 46. The processing-liquid recovery path 137 is provided with foreign substance removal lines 181, 182 including filters 200, 201 for removing an foreign substance from the processing liquid and cleaners 201, 211 for cleaning the filters 200, 201 respectively. With this constitution, it is possible to cancel the blocking of foreign substances in pipes etc. and also possible to lengthen the life span of the filters.

公开(公告)号：US07472713B2

公开(公告)日：2009-01-06

申请号：US11413150

申请日：2006-04-28

申请人： Masaru Amai ,  Masahiro Mukoyama ,  Takayuki Toshima

发明人： Masaru Amai ,  Masahiro Mukoyama ,  Takayuki Toshima

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  B08B3/04 ,  Y10S134/902

摘要： A substrate processing apparatus includes a substrate processing part 46 for processing a substrate by a processing liquid and a processing-liquid recovery path 137 allowing of a passage of the processing liquid discharged from the substrate processing part 46. The processing-liquid recovery path 137 is provided with foreign substance removal lines 181, 182 including filters 200, 201 for removing an foreign substance from the processing liquid and cleaners 201, 211 for cleaning the filters 200, 201 respectively. With this constitution, it is possible to cancel the blocking of foreign substances in pipes etc. and also possible to lengthen the life span of the filters.

摘要翻译： 基板处理装置包括：基板处理部46，用于通过处理液处理基板;以及处理液回收路径137，允许从基板处理部46排出的处理液的通过。处理液回收路径137为 设置有用于从处理液中除去异物的过滤器200,201以及分别清洗过滤器200,201的清洗器201,211的异物除去管线181,182。 通过这种结构，可以消除管等中的异物的堵塞，并且也可以延长过滤器的使用寿命。