公开(公告)号：US20240363391A1

公开(公告)日：2024-10-31

申请号：US18770734

申请日：2024-07-12

Applicant: Tokyo Electron Limited

Inventor： Kazuya IKEUE

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/67051 ,  H01L21/67259 ,  H01L21/68764

Abstract: A processing apparatus configured to process a substrate includes a substrate holder having a substrate holding surface configured to attract and hold the substrate thereon; and an edge cleaning device configured to clean an edge portion of the substrate holding surface. Further, a processing method of processing a rear surface of the substrate by using the processing apparatus includes processing the rear surface of the substrate while a front surface of the substrate is attracted to and held by a substrate holding surface of a substrate holder; and cleaning an edge portion of the substrate holding surface.

公开(公告)号：US12131897B2

公开(公告)日：2024-10-29

申请号：US18312073

申请日：2023-05-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-I Peng ,  Hsiu-Ming Yeh ,  Yi-Chang Liu

IPC: H01L21/02 ,  B24B37/10 ,  H01L21/306 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/02057 ,  B24B37/10 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/67748 ,  H01L21/67259

Abstract: A method for processing a semiconductor wafer is provided. The method includes polishing the semiconductor wafer with a chemical mechanical polishing (CMP) tool. The method includes transferring the polished semiconductor wafer to an interface tool from the CMP tool. The method includes discharging a mist spray over the polished semiconductor wafer in the interface tool. The method includes transferring the semiconductor wafer form the interface tool to a cleaning tool for a cleaning process.

公开(公告)号：US12128450B2

公开(公告)日：2024-10-29

申请号：US17392389

申请日：2021-08-03

Applicant: SEMES CO., LTD.

Inventor： Junhyun Lim ,  Yunseok Jeon ,  Gilhun Song ,  Junkee Kang

IPC: B08B3/02 ,  F26B3/04 ,  B08B5/02 ,  H01L21/67

CPC classification number: B08B3/02 ,  F26B3/04 ,  B08B5/02 ,  H01L21/67051

Abstract: An apparatus for processing a substrate may include a processing module including at least one process chamber performing a desired process on a substrate and an index module transferring the substrate from an outside into the processing module. The at least one process chamber may include a supporting unit on which the substrate is placed and a back nozzle unit disposed under a bottom face of the substrate. The back nozzle unit may include a skirt, at least one back nozzle providing a cleaning solution onto the bottom face of the substrate and a gas nozzle providing a gas onto the bottom face of the substrate. The skirt may include a body and a plurality of first flow paths and a plurality of second flow paths which are formed in the body and provide a gas toward the bottom face of the substrate.

公开(公告)号：US12125725B2

公开(公告)日：2024-10-22

申请号：US18222328

申请日：2023-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Sheng Kuo ,  Guan-Wei Huang ,  Chih-Hung Huang ,  Yang-Ann Chu ,  Hsu-Shui Liu ,  Jiun-Rong Pai

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/67288 ,  H01L21/02057 ,  H01L21/67051 ,  H01L22/12

Abstract: In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.

公开(公告)号：US12119241B2

公开(公告)日：2024-10-15

申请号：US17879012

申请日：2022-08-02

Applicant: SEMES CO., LTD.

Inventor： Dong Hwa Lee ,  Dai Geon Yoon ,  Soo Hong Lee ,  Ji Hyeon Kim ,  Dae Sung Kim

IPC: B41J2/165 ,  H01L21/67

CPC classification number: H01L21/67051 ,  B41J2/16517 ,  H01L21/67253

Abstract: A unit for supplying a substrate-treating liquid is provided with a first reservoir and a second reservoir between which a differential pressure is constantly maintained to establish a flow rate, along with a substrate-treating apparatus having the unit for supplying the substrate-treating liquid. The unit for supplying the substrate-treating liquid includes a supply reservoir module and a buffer reservoir module. The supply reservoir module includes a first reservoir for supplying the substrate-treating liquid to an inkjet head unit for jetting the substrate-treating liquid onto a substrate, and a second reservoir for recovering the substrate-treating liquid that remains unused in the inkjet head unit. The buffer reservoir module is configured to provide the substrate-treating liquid to the first reservoir. Differential pressure is constantly maintained between the first reservoir and the second reservoir.

公开(公告)号：US20240339353A1

公开(公告)日：2024-10-10

申请号：US18293633

申请日：2022-08-02

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Hongyu ZHAO ,  Aibing LI ,  Ruiting WANG

IPC: H01L21/687 ,  B08B3/02 ,  H01L21/67

CPC classification number: H01L21/68742 ,  B08B3/02 ,  H01L21/67051

Abstract: The present disclosure provides a wafer chuck in semiconductor cleaning equipment, including a chuck base, a jetting assembly arranged on the chuck base, and a plurality of wafer lifting shafts arranged on the chuck base. The chuck base includes a carrier surface for supporting the wafer. The gas outlet of the jetting assembly is located in the center area of the carrier surface and configured to jet gas between the carrier surface and the wafer. The plurality of wafer lifting shafts are distributed around the gas outlet of the jetting assembly along the circumference of the carrier surface. Each wafer lifting shaft of the plurality of wafer lifting shafts is movable relative to the chuck base, and each wafer lifting shaft includes an inclined platform. The inclined platform includes an inclined extension surface. The inclined extension surface is configured to carry the wafer at the edge of the wafer.

公开(公告)号：US20240321600A1

公开(公告)日：2024-09-26

申请号：US18573615

申请日：2022-06-14

Applicant: Tokyo Electron Limited

Inventor： Takanori Obaru

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/67253 ,  H01L21/68764

Abstract: A substrate liquid processing apparatus includes a substrate holder configured to hold a substrate; a rotational driver configured to rotate the substrate; a liquid discharger having a liquid supply nozzle configured to discharge a liquid toward a processing surface of the substrate; a processing liquid discharger having a processing liquid supply nozzle configured to discharge a processing liquid in a form of mist toward the processing surface; a first driver configured to move the processing liquid supply nozzle; and a controller. The controller controls the processing liquid discharger and the first driver to allow a landing position of the processing liquid on the processing surface on which a liquid film containing the liquid is formed to be moved from an outer peripheral portion of the processing surface toward a central portion thereof while controlling the liquid discharger to discharge the liquid toward the processing surface of the substrate.

公开(公告)号：US12090527B2

公开(公告)日：2024-09-17

申请号：US16909023

申请日：2020-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Syuan Jhuan ,  Ming-Jung Chen ,  Shao-Yen Ku ,  Tsai-Pao Su

IPC: H01L21/02 ,  B08B3/04 ,  H01L21/67

CPC classification number: B08B3/04 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051

Abstract: A method of processing a substrate in semiconductor fabrication is provided. The method includes supplying a mixture from a storage module to a chamber via an inlet conduit. The method further includes detecting the concentration of a substance in the mixture. The method also includes dispensing the mixture over a substrate disposed in the chamber. In addition, the method includes supplying a supply solution including the substance to the chamber via the inlet conduit and dispensing the supply solution over the substrate when the concentration of the substance in the mixture is less than a desired value. The supply solution is supplied to the inlet conduit at a first position that is at a portion of the inlet conduit extending in the chamber.

公开(公告)号：US12064739B2

公开(公告)日：2024-08-20

申请号：US17867693

申请日：2022-07-19

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hajime Nishide ,  Takashi Izuta ,  Takatoshi Hayashi ,  Katsuhiro Fukui ,  Koichi Okamoto ,  Kazuhiro Fujita ,  Atsuyasu Miura ,  Kenji Kobayashi ,  Sei Negoro ,  Hiroki Tsujikawa

IPC: B01F15/04 ,  B01F3/04 ,  B01F15/00 ,  B01F23/231 ,  B01F23/237 ,  B01F35/21 ,  B01F35/22 ,  B01F35/82 ,  G05D11/00 ,  G05D21/02 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/67 ,  B01F101/58

CPC classification number: B01F35/82 ,  B01F23/231 ,  B01F23/237611 ,  B01F23/237612 ,  B01F23/23765 ,  B01F35/2132 ,  B01F35/2202 ,  G05D11/00 ,  G05D21/02 ,  H01L21/30608 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/6708 ,  B01F2101/58

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

公开(公告)号：US12062735B2

公开(公告)日：2024-08-13

申请号：US17691091

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Hou T. Ng ,  Daihua Zhang ,  Nag B. Patibandla

IPC: H01L33/00 ,  B08B3/08 ,  B41M3/00 ,  B41M5/00 ,  B41M7/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/677 ,  H01L25/075 ,  H01L25/16

CPC classification number: H01L33/0095 ,  B08B3/08 ,  B41M3/003 ,  B41M3/006 ,  B41M5/0047 ,  B41M7/00 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67236 ,  H01L21/67288 ,  H01L21/67715 ,  H01L22/20 ,  H01L25/0753 ,  H01L21/67167 ,  H01L21/67173 ,  H01L25/167 ,  H01L2933/0041

Abstract: An LED display fabrication tool includes a plurality of process chambers and a plurality of transfer chambers. The plurality of process chambers include first and second dispensing chambers to deliver first and second color conversion precursors onto a workpiece for fabrication of a light emitting diode (LED) displays, and first and second washing/drying chambers to remove uncured portions of the first and second color conversion precursors from the workpiece and then dries the workpiece. The plurality of transfer chambers are coupled to two process chambers by two respective sealable ports. First and second curing stations cure the precursors to form the first and second color conversion layers over a first set of LEDs on the workpiece.