公开(公告)号：US08555141B2

公开(公告)日：2013-10-08

申请号：US12477996

申请日：2009-06-04

申请人： Michael Hicken ,  Timothy Swatosh ,  Martin Dell

发明人： Michael Hicken ,  Timothy Swatosh ,  Martin Dell

IPC分类号： G11C29/00

CPC分类号： G11C16/04 ,  G06F11/1068

摘要： A flash-memory system is organized into a plurality of blocks and a plurality of pages in each block, each page having 2N data locations and K spare locations. At least one page in the memory has 2M user data sectors and each sector has 2N-M+L locations therein. Because L is at least 1 but less than 2N-M, user data is stored in the spare memory locations. By storing user data in spare locations that were previously off-limits to user data, enterprise-sized sectors can be efficiently stored in flash memories with little wasted memory, thereby making flash-memory systems compatible with existing hard-drive storage systems in enterprise system applications.

摘要翻译： 闪存系统被组织成多个块和每个块中的多个页面，每个页面具有2N个数据位置和K个备用位置。 存储器中的至少一个页面具有2M个用户数据扇区，并且每个扇区在其中具有2N-M + L个位置。 因为L至少为1但小于2N-M，所以用户数据存储在备用存储单元中。 通过将用户数据存储在以前对用户数据进行限制的备用位置，企业级扇区可以有效地存储在闪存中，而且内存很少浪费，从而使闪存系统与企业系统中的现有硬盘驱动器存储系统兼容 应用程序。

公开(公告)号：US20100313097A1

公开(公告)日：2010-12-09

申请号：US12477996

申请日：2009-06-04

申请人： Michael Hicken ,  Timothy Swatosh ,  Martin Dell

发明人： Michael Hicken ,  Timothy Swatosh ,  Martin Dell

IPC分类号： G06F11/08 ,  G06F12/00 ,  G06F12/02

CPC分类号： G11C16/04 ,  G06F11/1068

摘要： A flash-memory system is organized into a plurality of blocks and a plurality of pages in each block, each page having 2N data locations and K spare locations. At least one page in the memory has 2M user data sectors and each sector has 2N-M+L locations therein. Because L is at least 1 but less than 2N-M, user data is stored in the spare memory locations. By storing user data in spare locations that were previously off-limits to user data, enterprise-sized sectors can be efficiently stored in flash memories with little wasted memory, thereby making flash-memory systems compatible with existing hard-drive storage systems in enterprise system applications.

摘要翻译： 闪存系统被组织成多个块和每个块中的多个页面，每个页面具有2N个数据位置和K个备用位置。 存储器中的至少一个页面具有2M个用户数据扇区，并且每个扇区在其中具有2N-M + L个位置。 因为L至少为1但小于2N-M，所以用户数据存储在备用存储单元中。 通过将用户数据存储在以前对用户数据进行限制的备用位置，企业级扇区可以有效地存储在闪存中，而且内存很少浪费，从而使闪存系统与企业系统中的现有硬盘驱动器存储系统兼容 应用程序。

公开(公告)号：US08245112B2

公开(公告)日：2012-08-14

申请号：US12478013

申请日：2009-06-04

申请人： Michael Hicken ,  Martin Dell

发明人： Michael Hicken ,  Martin Dell

IPC分类号： G11C29/00

CPC分类号： G06F11/1068 ,  G06F12/0246 ,  G06F2212/403 ,  G06F2212/7207 ,  H03M13/15 ,  H03M13/152

摘要： A flash-memory system is organized into a plurality of blocks and a plurality of pages in each block, each page having 2N data locations and K spare locations. At least one page in the memory has 2M−1 user data sectors and each sector has 2N-M+L locations therein. Error-correction code (ECC) data related to the user data is calculated and stored in at least the 2M user data locations unused by the 2M−1 user data sectors. Because L is at least 1 but less than 2N-M (N>M), at least a portion of one user data sector is stored in the spare memory locations. Additional locations in each page are available to allow for the ECC data to have additional redundancy bits added per sector, thereby making the flash memory system more robust and reliable.

摘要翻译： 闪存系统被组织成多个块和每个块中的多个页面，每个页面具有2N个数据位置和K个备用位置。 存储器中的至少一个页面具有2M-1个用户数据扇区，并且每个扇区在其中具有2N-M + L个位置。 计算与用户数据相关的纠错码（ECC）数据，并将其存储在2M-1个用户数据扇区未使用的2M个用户数据位置中。 因为L是至少1但小于2N-M（N> M），一个用户数据扇区的至少一部分被存储在备用存储单元中。 每个页面中的附加位置都可用于允许ECC数据在每个扇区添加额外的冗余位，从而使闪存系统更加稳健可靠。

公开(公告)号：US20100313100A1

公开(公告)日：2010-12-09

申请号：US12478013

申请日：2009-06-04

申请人： Michael Hicken ,  Martin Dell

发明人： Michael Hicken ,  Martin Dell

IPC分类号： H03M13/05 ,  G06F11/07

CPC分类号： G06F11/1068 ,  G06F12/0246 ,  G06F2212/403 ,  G06F2212/7207 ,  H03M13/15 ,  H03M13/152

摘要： A flash-memory system is organized into a plurality of blocks and a plurality of pages in each block, each page having 2N data locations and K spare locations. At least one page in the memory has 2M−1 user data sectors and each sector has 2N−M+L locations therein. Error-correction code (ECC) data related to the user data is calculated and stored in at least the 2M user data locations unused by the 2M−1 user data sectors. Because L is at least 1 but less than 2N−M (N>M), at least a portion of one user data sector is stored in the spare memory locations. Additional locations in each page are available to allow for the ECC data to have additional redundancy bits added per sector, thereby making the flash memory system more robust and reliable.

摘要翻译： 闪存系统被组织成多个块和每个块中的多个页面，每个页面具有2N个数据位置和K个备用位置。 存储器中的至少一个页面具有2M-1个用户数据扇区，并且每个扇区在其中具有2N-M + L个位置。 计算与用户数据相关的纠错码（ECC）数据，并存储在2M-1个用户数据扇区未使用的2M个用户数据位置中。 因为L是至少1但小于2N-M（N> M），一个用户数据扇区的至少一部分被存储在备用存储单元中。 每个页面中的附加位置都可用于允许ECC数据在每个扇区添加额外的冗余位，从而使闪存系统更加稳健可靠。