公开(公告)号：US20200176255A1

公开(公告)日：2020-06-04

申请号：US16208122

申请日：2018-12-03

Applicant: Micron Technology, Inc.

Inventor： Akash Nigam ,  Rajesh N. Gupta

IPC: H01L21/033 ,  H01L21/768

Abstract: A method of forming sublithographic features. The method comprises forming a pattern of lines at a first pitch, the lines comprising horizontal portions and sloped portions. A spacer material is formed adjacent to the lines and portions of the spacer material are removed to form spacers on the lines, the spacers comprising a second pitch. The lines are removed. A sloped profile of the lines prevents the formation of loops of the spacer material, enabling the formation of sublithographic features without using a chop mask or chop mask process acts. Additional methods are disclosed.