公开(公告)号：US11903201B2

公开(公告)日：2024-02-13

申请号：US17391319

申请日：2021-08-02

Applicant: Micron Technology, Inc.

Inventor： Gordon A. Haller ,  William R. Kueber ,  Zachary D. Beaman ,  Christopher G. Shea ,  Taehyun Kim

IPC: H01L21/768 ,  H10B43/27 ,  H01L23/532 ,  H01L23/535 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

CPC classification number: H10B43/27 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/535 ,  H01L23/53266 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.

公开(公告)号：US20210358950A1

公开(公告)日：2021-11-18

申请号：US17391319

申请日：2021-08-02

Applicant: Micron Technology, Inc.

Inventor： Gordon A. Haller ,  William R. Kueber ,  Zachary D. Beaman ,  Christopher G. Shea ,  Taehyun Kim

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535

Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.

公开(公告)号：US11088165B2

公开(公告)日：2021-08-10

申请号：US16705449

申请日：2019-12-06

Applicant: Micron Technology, Inc.

Inventor： Gordon A. Haller ,  William R. Kueber ,  Zachary D. Beaman ,  Christopher G. Shea ,  Taehyun Kim

IPC: H01L27/115 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535

Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.

公开(公告)号：US20230413561A1

公开(公告)日：2023-12-21

申请号：US18241402

申请日：2023-09-01

Applicant: Micron Technology, Inc.

Inventor： Gordon A. Haller ,  William R. Kueber ,  Zachary D. Beaman ,  Christopher G. Shea ,  Taehyun Kim

IPC: H10B43/27 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

CPC classification number: H10B43/27 ,  H01L21/76895 ,  H01L23/53266 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/535 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.

公开(公告)号：US20210175248A1

公开(公告)日：2021-06-10

申请号：US16705449

申请日：2019-12-06

Applicant: Micron Technology, Inc.

Inventor： Gordon A. Haller ,  William R. Kueber ,  Zachary D. Beaman ,  Christopher G. Shea ,  Taehyun Kim

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/535 ,  H01L23/532 ,  H01L21/768

Abstract: Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.