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1.发明申请PHASE CHANGE MEMORY INCLUDING OVONIC THRESHOLD SWITCH WITH LAYERED ELECTRODE AND METHODS FOR FORMING THE SAME 有权相变式存储器，包括具有层状电极的OVONIC THRESHED开关及其形成方法公开(公告)号：US20130344676A1
公开(公告)日：2013-12-26
申请号：US14013361
申请日：2013-08-29
Applicant: Micron Technology, Inc.
Inventor： Kuo-Wei Chang , Jinwook Lee , Jong-Won Lee , Elijah V. Karpov
IPC: H01L45/00
CPC classification number: H01L45/16 , H01L45/06 , H01L45/1253 , H01L45/126 , H01L45/141 , H01L45/1675
Abstract: Erosion of chalcogenides in phase change memories using ovonic threshold switch selectors can be reduced by controlling columnar morphology in electrodes used in the ovonic threshold switch. The columnar morphology may cause cracks to occur which allow etchants used to etch the ovonic threshold switch to sneak through the ovonic threshold switch and to attack chalcogenides, either in the switch or in the memory element. In one embodiment, the electrode may be split into two metal nitride layers separated by an intervening metal layer.
Abstract translation: 通过控制在椭圆形阈值开关中使用的电极中的柱状形态，可以减少硫化物在相变存储器中的侵蚀。 柱状形态可能导致裂纹发生，这允许蚀刻剂用于蚀刻超声波阈值开关以潜入超声波阈值开关，并在开关或存储元件中攻击硫族化物。 在一个实施例中，电极可以被分成由中间金属层隔开的两个金属氮化物层。
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2.发明授权Phase change memory including ovonic threshold switch with layered electrode and methods for forming the same 有权相变存储器，包括具有分层电极的超声门限开关及其形成方法公开(公告)号：US09029826B2
公开(公告)日：2015-05-12
申请号：US14013361
申请日：2013-08-29
Applicant: Micron Technology, Inc.
Inventor： Kuo-Wei Chang , Jinwook Lee , Jong-Won Lee , Elijah V. Karpov
CPC classification number: H01L45/16 , H01L45/06 , H01L45/1253 , H01L45/126 , H01L45/141 , H01L45/1675
Abstract: Erosion of chalcogenides in phase change memories using ovonic threshold switch selectors can be reduced by controlling columnar morphology in electrodes used in the ovonic threshold switch. The columnar morphology may cause cracks to occur which allow etchants used to etch the ovonic threshold switch to sneak through the ovonic threshold switch and to attack chalcogenides, either in the switch or in the memory element. In one embodiment, the electrode may be split into two metal nitride layers separated by an intervening metal layer.
Abstract translation: 通过控制在椭圆形阈值开关中使用的电极中的柱状形态，可以减少硫化物在相变存储器中的侵蚀。 柱状形态可能导致裂纹发生，这允许蚀刻剂用于蚀刻超声波阈值开关以潜入超声波阈值开关，并在开关或存储元件中攻击硫族化物。 在一个实施例中，电极可以被分成由中间金属层隔开的两个金属氮化物层。
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