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Patent Agency Ranking
公开(公告)号：US10916418B2
公开(公告)日：2021-02-09
申请号：US16676881
申请日：2019-11-07
Applicant: Micron Technology, Inc.
Inventor： Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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公开(公告)号：US20190267232A1
公开(公告)日：2019-08-29
申请号：US15904777
申请日：2018-02-26
Applicant: Micron Technology, Inc.
Inventor： Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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公开(公告)号：US11651952B2
公开(公告)日：2023-05-16
申请号：US17168393
申请日：2021-02-05
Applicant: Micron Technology, Inc.
Inventor： Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
CPC classification number: H01L21/02057 , B81C1/00849 , H01L21/02118 , H01L21/02282 , H01L21/02334 , B81C2201/0108
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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公开(公告)号：US20210159069A1
公开(公告)日：2021-05-27
申请号：US17168393
申请日：2021-02-05
Applicant: Micron Technology, Inc.
Inventor： Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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公开(公告)号：US20200075316A1
公开(公告)日：2020-03-05
申请号：US16676881
申请日：2019-11-07
Applicant: Micron Technology, Inc.
Inventor： Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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