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公开(公告)号:US10916418B2
公开(公告)日:2021-02-09
申请号:US16676881
申请日:2019-11-07
Applicant: Micron Technology, Inc.
Inventor: Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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公开(公告)号:US11651952B2
公开(公告)日:2023-05-16
申请号:US17168393
申请日:2021-02-05
Applicant: Micron Technology, Inc.
Inventor: Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
CPC classification number: H01L21/02057 , B81C1/00849 , H01L21/02118 , H01L21/02282 , H01L21/02334 , B81C2201/0108
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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公开(公告)号:US09653307B1
公开(公告)日:2017-05-16
申请号:US15210249
申请日:2016-07-14
Applicant: Micron Technology, Inc.
Inventor: Jerome A. Imonigie , Ian C. Laboriante , Michael T. Andreas , Sanjeev Sapra , Prashant Raghu
IPC: H01L21/306 , C09D5/16 , C09D7/12
CPC classification number: H01L21/306 , H01L21/02057 , H01L21/0206 , H01L21/02068 , H01L21/3105 , H01L21/321
Abstract: A surface modification composition comprising a silylation agent comprising a silyl acetamide, a silylation catalyst comprising a perfluoro acid anhydride, an amine-based complexing agent, and an organic solvent. Methods of modifying a silicon-based material and methods of forming high aspect ratio structures on a substrate are also disclosed.
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公开(公告)号:US20210159069A1
公开(公告)日:2021-05-27
申请号:US17168393
申请日:2021-02-05
Applicant: Micron Technology, Inc.
Inventor: Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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公开(公告)号:US20200075316A1
公开(公告)日:2020-03-05
申请号:US16676881
申请日:2019-11-07
Applicant: Micron Technology, Inc.
Inventor: Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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公开(公告)号:US20190267232A1
公开(公告)日:2019-08-29
申请号:US15904777
申请日:2018-02-26
Applicant: Micron Technology, Inc.
Inventor: Michael T. Andreas , Jerome A. Imonigie , Prashant Raghu , Sanjeev Sapra , Ian K. McDaniel
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
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