公开(公告)号：US10916418B2

公开(公告)日：2021-02-09

申请号：US16676881

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Michael T. Andreas ,  Jerome A. Imonigie ,  Prashant Raghu ,  Sanjeev Sapra ,  Ian K. McDaniel

IPC: H01L21/02 ,  B81C1/00

Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.

公开(公告)号：US11651952B2

公开(公告)日：2023-05-16

申请号：US17168393

申请日：2021-02-05

Applicant: Micron Technology, Inc.

Inventor： Michael T. Andreas ,  Jerome A. Imonigie ,  Prashant Raghu ,  Sanjeev Sapra ,  Ian K. McDaniel

IPC: H01L21/02 ,  B81C1/00

CPC classification number: H01L21/02057 ,  B81C1/00849 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02334 ,  B81C2201/0108

Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.

公开(公告)号：US09653307B1

公开(公告)日：2017-05-16

申请号：US15210249

申请日：2016-07-14

Applicant: Micron Technology, Inc.

Inventor： Jerome A. Imonigie ,  Ian C. Laboriante ,  Michael T. Andreas ,  Sanjeev Sapra ,  Prashant Raghu

IPC: H01L21/306 ,  C09D5/16 ,  C09D7/12

CPC classification number: H01L21/306 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321

Abstract: A surface modification composition comprising a silylation agent comprising a silyl acetamide, a silylation catalyst comprising a perfluoro acid anhydride, an amine-based complexing agent, and an organic solvent. Methods of modifying a silicon-based material and methods of forming high aspect ratio structures on a substrate are also disclosed.

公开(公告)号：US20210159069A1

公开(公告)日：2021-05-27

申请号：US17168393

申请日：2021-02-05

Applicant: Micron Technology, Inc.

Inventor： Michael T. Andreas ,  Jerome A. Imonigie ,  Prashant Raghu ,  Sanjeev Sapra ,  Ian K. McDaniel

IPC: H01L21/02 ,  B81C1/00

Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.

公开(公告)号：US20200075316A1

公开(公告)日：2020-03-05

申请号：US16676881

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Michael T. Andreas ,  Jerome A. Imonigie ,  Prashant Raghu ,  Sanjeev Sapra ,  Ian K. McDaniel

IPC: H01L21/02 ,  B81C1/00

Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.

公开(公告)号：US20190267232A1

公开(公告)日：2019-08-29

申请号：US15904777

申请日：2018-02-26

Applicant: Micron Technology, Inc.

Inventor： Michael T. Andreas ,  Jerome A. Imonigie ,  Prashant Raghu ,  Sanjeev Sapra ,  Ian K. McDaniel

IPC: H01L21/02 ,  B81C1/00

Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.