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公开(公告)号:US20240347083A1
公开(公告)日:2024-10-17
申请号:US18614244
申请日:2024-03-22
Applicant: Micron Technology, Inc.
CPC classification number: G11C7/1084 , G11C7/1069 , G11C7/1096 , G11C7/14
Abstract: Methods, systems, and devices for mitigating memory die misalignment are described. A memory system may receive a command to write data to a memory device including a memory die. The memory system may determine whether the data indicated by the command (e.g., a first set of data) satisfies a threshold size. If the first set of data satisfies the threshold size, the memory system may determine whether data currently in a write buffer aligns with a boundary of the memory die. For example, depending on the data currently in the buffer, adding the first set of data to the buffer may result in die misalignment for the first set of data. To mitigate die misalignment, the memory system may pad data (e.g., add dummy data) to the write buffer, such that the padding aligns the data with the die boundary.
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公开(公告)号:US20230360682A1
公开(公告)日:2023-11-09
申请号:US17629600
申请日:2021-03-18
Applicant: Micron Technology, Inc.
CPC classification number: G11C7/1084 , G11C7/1096 , G11C7/1069 , G11C7/14
Abstract: Methods, systems, and devices for mitigating memory die misalignment are described. A memory system may receive a command to write data to a memory device including a memory die. The memory system may determine whether the data indicated by the command (e.g., a first set of data) satisfies a threshold size. If the first set of data satisfies the threshold size, the memory system may determine whether data currently in a write buffer aligns with a boundary of the memory die. For example, depending on the data currently in the buffer, adding the first set of data to the buffer may result in die misalignment for the first set of data. To mitigate die misalignment, the memory system may pad data (e.g., add dummy data) to the write buffer, such that the padding aligns the data with the die boundary.
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公开(公告)号:US11955203B2
公开(公告)日:2024-04-09
申请号:US17629600
申请日:2021-03-18
Applicant: Micron Technology, Inc.
CPC classification number: G11C7/1084 , G11C7/1069 , G11C7/1096 , G11C7/14
Abstract: Methods, systems, and devices for mitigating memory die misalignment are described. A memory system may receive a command to write data to a memory device including a memory die. The memory system may determine whether the data indicated by the command (e.g., a first set of data) satisfies a threshold size. If the first set of data satisfies the threshold size, the memory system may determine whether data currently in a write buffer aligns with a boundary of the memory die. For example, depending on the data currently in the buffer, adding the first set of data to the buffer may result in die misalignment for the first set of data. To mitigate die misalignment, the memory system may pad data (e.g., add dummy data) to the write buffer, such that the padding aligns the data with the die boundary.
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