公开(公告)号：US20210327881A1

公开(公告)日：2021-10-21

申请号：US16851588

申请日：2020-04-17

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Ke-Hung Chen ,  Christopher W. Petz ,  Pankaj Sharma ,  Yong Mo Yang

IPC: H01L27/108 ,  H01L49/02 ,  H01L27/07

Abstract: Some embodiments include an integrated assembly having capacitor-contact-regions. Metal-containing interconnects are coupled with the capacitor-contact-regions. A first insulative material is between the metal-containing interconnects. A second insulative material is over the first insulative material. A third insulative material is over the second insulative material. First capacitor electrodes extend through the second and third insulative materials and are coupled with the metal-containing interconnects. Fourth insulative material is adjacent the first capacitor electrodes. Capacitor plate electrodes are adjacent the fourth insulative material and are spaced from the first capacitor electrodes by the fourth insulative material. Some embodiments include methods of forming integrated assemblies.