公开(公告)号：US20220238532A1

公开(公告)日：2022-07-28

申请号：US17647902

申请日：2022-01-13

Applicant: Micron Technology, Inc.

Inventor： Devesh Dadhich Shreeram ,  Kangle Li ,  Matthew N. Rocklein ,  Wei Ching Huang ,  Ping-Cheng Hsu ,  Sevim Korkmaz ,  Sanjeev Sapra ,  An-Jen B. Cheng

IPC: H01L27/108

Abstract: A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.

公开(公告)号：US12193208B2

公开(公告)日：2025-01-07

申请号：US17647902

申请日：2022-01-13

Applicant: Micron Technology, Inc.

Inventor： Devesh Dadhich Shreeram ,  Kangle Li ,  Matthew N. Rocklein ,  Wei Ching Huang ,  Ping-Cheng Hsu ,  Sevim Korkmaz ,  Sanjeev Sapra ,  An-Jen B. Cheng

IPC: H10B12/00

Abstract: A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.