公开(公告)号：US20210175245A1

公开(公告)日：2021-06-10

申请号：US16704176

申请日：2019-12-05

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H01L27/11582 ,  H01L27/11565

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

公开(公告)号：US20220157850A1

公开(公告)日：2022-05-19

申请号：US17586682

申请日：2022-01-27

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H01L27/11582 ,  H01L27/11565

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

公开(公告)号：US11271006B2

公开(公告)日：2022-03-08

申请号：US16704176

申请日：2019-12-05

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H01L27/11582 ,  H01L27/11565

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

公开(公告)号：US20250151276A1

公开(公告)日：2025-05-08

申请号：US19018899

申请日：2025-01-13

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H10B43/27 ,  H10B43/10

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

公开(公告)号：US12250818B2

公开(公告)日：2025-03-11

申请号：US17586682

申请日：2022-01-27

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H10B43/27 ,  H10B43/10

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.