公开(公告)号：US10749041B2

公开(公告)日：2020-08-18

申请号：US16659478

申请日：2019-10-21

Applicant: Micron Technology, Inc.

Inventor： Fei Wang ,  Kunal Shrotri ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Duo Mao ,  Zhixin Xu ,  Ee Ee Eng ,  Jie Li ,  Dong Liang

IPC: H01L29/792 ,  H01L27/1157 ,  H01L29/66 ,  H01L21/28 ,  G11C16/04 ,  G11C16/08

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

公开(公告)号：US10483407B2

公开(公告)日：2019-11-19

申请号：US15957594

申请日：2018-04-19

Applicant: Micron Technology, Inc.

Inventor： Fei Wang ,  Kunal Shrotri ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Duo Mao ,  Zhixin Xu ,  Ee Ee Eng ,  Jie Li ,  Dong Liang

IPC: H01L21/28 ,  H01L27/1157 ,  H01L29/66 ,  G11C16/04 ,  G11C16/08 ,  H01L29/792

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

公开(公告)号：US20220157850A1

公开(公告)日：2022-05-19

申请号：US17586682

申请日：2022-01-27

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H01L27/11582 ,  H01L27/11565

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

公开(公告)号：US11271006B2

公开(公告)日：2022-03-08

申请号：US16704176

申请日：2019-12-05

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H01L27/11582 ,  H01L27/11565

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

公开(公告)号：US12250818B2

公开(公告)日：2025-03-11

申请号：US17586682

申请日：2022-01-27

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H10B43/27 ,  H10B43/10

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

公开(公告)号：US20200052134A1

公开(公告)日：2020-02-13

申请号：US16659478

申请日：2019-10-21

Applicant: Micron Technology, Inc.

Inventor： Fei Wang ,  Kunal Shrotri ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Duo Mao ,  Zhixin Xu ,  Ee Ee Eng ,  Jie Li ,  Dong Liang

IPC: H01L29/792 ,  G11C16/04 ,  G11C16/08 ,  H01L27/1157 ,  H01L29/66 ,  H01L21/28

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

公开(公告)号：US20210175245A1

公开(公告)日：2021-06-10

申请号：US16704176

申请日：2019-12-05

Applicant: Micron Technology, Inc.

Inventor： Pei Qiong Cheung ,  Zhixin Xu ,  Yuan Fang

IPC: H01L27/11582 ,  H01L27/11565

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

公开(公告)号：US20190326445A1

公开(公告)日：2019-10-24

申请号：US15957594

申请日：2018-04-19

Applicant: Micron Technology, Inc.

Inventor： Fei Wang ,  Kunal Shrotri ,  Jeffery B. Hull ,  Anish A. Khandekar ,  Duo Mao ,  Zhixin Xu ,  Ee Ee Eng ,  Jie Li ,  Dong Liang

IPC: H01L29/792 ,  H01L29/66 ,  H01L27/1157 ,  G11C16/04 ,  G11C16/08 ,  H01L21/28

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.