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公开(公告)号：US20210211100A1
公开(公告)日：2021-07-08
申请号：US17212679
申请日：2021-03-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA
IPC: H03F1/26 , H03F3/195 , H04B1/525 , H04B1/04 , H03F3/24 , H01L23/538 , H01L25/16 , H03F3/21 , H04B1/10 , H04B1/16
Abstract: A PA module includes: a multilayer substrate having a ground pattern layer connected to a ground of a power source; amplifier transistors disposed on the multilayer substrate; a bypass capacitor having one end connected to the collector of the amplifier transistor; a first wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a second wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a third wiring line connecting the other end of the bypass capacitor and the ground pattern layer to each other; and a fourth wiring line formed between the amplifier transistor and the ground pattern layer and between the bypass capacitor and the ground pattern layer and connecting the first wiring line and the third wiring line to each other.
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公开(公告)号：US20190296694A1
公开(公告)日：2019-09-26
申请号：US16440352
申请日：2019-06-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA
Abstract: A high-frequency front end circuit includes an antenna terminal, a reception circuit that is directly or indirectly connected to the antenna terminal, and a transmission circuit that is directly or indirectly connected to the antenna terminal, wherein the transmission circuit has an amplification circuit, the amplification circuit includes an input terminal and an output terminal, an amplification element provided on a path connecting the input terminal and the output terminal, and a bias circuit having an LC resonance circuit and connected to between the amplification element and the output terminal. A frequency pass band of the transmission circuit is lower than a frequency pass band of the reception circuit, and a value of a resonant frequency of the bias circuit is smaller than a value of a frequency pass band width of the transmission circuit.
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公开(公告)号：US20240195366A1
公开(公告)日：2024-06-13
申请号：US18528819
申请日：2023-12-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA , Hisanori NAMIE
CPC classification number: H03F3/195 , H03F1/565 , H03F3/211 , H03F3/213 , H03F2200/451 , H03F2200/48
Abstract: An amplifier circuit includes an inductor coupled to an amplifier, an inductor coupled to an amplifier, an inductor provided in series in a first output path connecting the amplifier and the inductor, a capacitor coupled to the first output path and the ground, a capacitor provided in series in a second output path connecting the amplifier and the inductor, an inductor coupled to the second output path and the ground, and a first circuit coupled between a first path connecting the inductors and a second path connecting the capacitor and the inductor.
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公开(公告)号：US20200212529A1
公开(公告)日：2020-07-02
申请号：US16817150
申请日：2020-03-12
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shou MATSUMOTO , Isao TAKENAKA
Abstract: Isolation characteristics of a directional coupler are improved. A high-frequency module (1) includes a substrate (2) and a directional coupler (5) provided on the substrate (2). The directional coupler (5) includes a main line (51), a sub line (52), and an impedance adjustment portion (7). The sub line (52) is electromagnetically coupled to the main line (51). The impedance adjustment portion (7) is provided in the sub line (52), and adjusts impedance of the directional coupler (5). The impedance adjustment portion (7) is electrically connected to an inductor of the substrate (2).
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公开(公告)号：US20200169225A1
公开(公告)日：2020-05-28
申请号：US16778854
申请日：2020-01-31
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA
IPC: H03F1/26 , H04B1/04 , H03F3/24 , H04B1/525 , H03F3/195 , H04B1/16 , H04B1/10 , H03F3/21 , H01L25/16 , H01L23/538
Abstract: A PA module includes: a multilayer substrate having a ground pattern layer connected to a ground of a power source; amplifier transistors disposed on the multilayer substrate; a bypass capacitor having one end connected to the collector of the amplifier transistor; a first wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a second wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a third wiring line connecting the other end of the bypass capacitor and the ground pattern layer to each other; and a fourth wiring line formed between the amplifier transistor and the ground pattern layer and between the bypass capacitor and the ground pattern layer and connecting the first wiring line and the third wiring line to each other.
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Patent Agency Ranking
公开(公告)号：US20180337638A1
公开(公告)日：2018-11-22
申请号：US15978823
申请日：2018-05-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA
CPC classification number: H03F1/26 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/245 , H03F2200/165 , H03F2200/171 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/451 , H04B1/0458 , H04B1/18 , H04B1/40
Abstract: A high-frequency front end circuit includes an antenna terminal, a reception circuit that is directly or indirectly connected to the antenna terminal, and a transmission circuit that is directly or indirectly connected to the antenna terminal, wherein the transmission circuit has an amplification circuit, the amplification circuit includes an input terminal and an output terminal, an amplification element provided on a path connecting the input terminal and the output terminal, and a bias circuit having an LC resonance circuit and connected to between the amplification element and the output terminal. A frequency pass band of the transmission circuit is lower than a frequency pass band of the reception circuit, and a value of a resonant frequency of the bias circuit is smaller than a value of a frequency pass band width of the transmission circuit.
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公开(公告)号：US20230179151A1
公开(公告)日：2023-06-08
申请号：US18163354
申请日：2023-02-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA
IPC: H03F1/26 , H03F3/195 , H04B1/525 , H04B1/04 , H03F3/24 , H01L23/538 , H01L25/16 , H03F3/21 , H04B1/10 , H04B1/16
CPC classification number: H03F1/26 , H03F3/195 , H04B1/525 , H04B1/0458 , H03F3/245 , H04B1/0475 , H01L23/5383 , H01L23/5386 , H01L25/16 , H03F3/211 , H04B1/1018 , H04B1/1607 , H04B2001/0408 , H03F2200/102 , H03F2200/129 , H03F2200/144 , H03F2200/165 , H03F2200/171 , H03F2200/294 , H03F2200/451
Abstract: A PA module includes: a multilayer substrate having a ground pattern layer connected to a ground of a power source; amplifier transistors disposed on the multilayer substrate; a bypass capacitor having one end connected to the collector of the amplifier transistor; a first wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a second wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a third wiring line connecting the other end of the bypass capacitor and the ground pattern layer to each other; and a fourth wiring line formed between the amplifier transistor and the ground pattern layer and between the bypass capacitor and the ground pattern layer and connecting the first wiring line and the third wiring line to each other.
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公开(公告)号：US20190238164A1
公开(公告)日：2019-08-01
申请号：US16377646
申请日：2019-04-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA
CPC classification number: H04B1/0057 , H03F1/565 , H03F3/19 , H03F3/21 , H03F3/245 , H03F3/72 , H03F2200/111 , H03F2200/171 , H03F2200/387 , H03F2200/451 , H03F2203/7209 , H03H7/38 , H03H11/34 , H04B1/006 , H04B1/50
Abstract: A demultiplexing apparatus according to the present disclosure includes an amplifier that amplifies transmission signals in three or more communication bands having different frequency bands; multiple signal paths which are commonly provided for an output terminal of the amplifier and on which the signals in the corresponding communication bands are propagated; and multiple transmission-reception filters which are provided on the multiple signal paths, and each of which isolates a transmission signal and a reception signal of the corresponding communication band from each other. The gains of the amplifier in the frequency bands of multiple reception signals are smaller than the gains of the amplifier in the frequency bands of multiple transmission signals.
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公开(公告)号：US20180248569A1
公开(公告)日：2018-08-30
申请号：US15964970
申请日：2018-04-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA
CPC classification number: H04B1/0057 , H03F1/565 , H03F3/19 , H03F3/21 , H03F3/245 , H03F3/72 , H03F2200/111 , H03F2200/171 , H03F2200/387 , H03F2200/451 , H03F2203/7209 , H03H7/38 , H03H11/34 , H04B1/50
Abstract: A demultiplexing apparatus according to the present disclosure includes an amplifier that amplifies transmission signals in three or more communication bands having different frequency bands; multiple signal paths which are commonly provided for an output terminal of the amplifier and on which the signals in the corresponding communication bands are propagated; and multiple transmission-reception filters which are provided on the multiple signal paths, and each of which isolates a transmission signal and a reception signal of the corresponding communication band from each other. The gains of the amplifier in the frequency bands of multiple reception signals are smaller than the gains of the amplifier in the frequency bands of multiple transmission signals.
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公开(公告)号：US20180109274A1
公开(公告)日：2018-04-19
申请号：US15843541
申请日：2017-12-15
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Isao TAKENAKA
Abstract: A high-frequency front-end circuit includes a communication band selection circuit, a high-frequency processing circuit, and a multi-band amplifier. The multi-band amplifier amplifies high-frequency signals in a plurality of communication bands. The communication band selection circuit is connected an output end of the multi-band amplifier. The communication band selection circuit includes a communication band selection switch. The high-frequency processing circuit is connected between a first connection line connecting the multi-band amplifier and the communication band selection circuit and a ground potential. The high-frequency processing circuit includes a passive element and an impedance selection switch. The passive element is connected between the first connection line and the ground potential. A first terminal of the impedance selection switch is connected to a second connection line connecting the passive element and the first connection line, and a second terminal of the impedance selection switch is connected to the ground potential.
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