公开(公告)号：US20230387344A1

公开(公告)日：2023-11-30

申请号：US18310002

申请日：2023-05-01

Applicant: NICHIA CORPORATION

Inventor： Yoshiki YAMAGUCHI ,  Hiroki HAYASHI ,  Satoshi OKUMURA ,  Minoru YAMAMOTO ,  Hiroaki TAMEMOTO

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L2933/0066

Abstract: A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.