公开(公告)号：US20180247871A1

公开(公告)日：2018-08-30

申请号：US15902756

申请日：2018-02-22

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Sho KUSAKA ,  Minoru YAMAMOTO ,  Masayuki IBARAKI ,  Hiroaki TAMEMOTO

IPC: H01L21/78 ,  H01L33/00

Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.

公开(公告)号：US20240258170A1

公开(公告)日：2024-08-01

申请号：US18422925

申请日：2024-01-25

Applicant: NICHIA CORPORATION

Inventor： Minoru YAMAMOTO ,  Naoto INOUE ,  Masayuki IBARAKI ,  Hiroaki TAMEMOTO

IPC: H01L21/78 ,  H01L21/428

CPC classification number: H01L21/78 ,  H01L21/428

Abstract: A method of manufacturing a semiconductor element includes irradiating a laser beam on a wafer, which includes a sapphire substrate having a first face and a second face opposite the first face and a semiconductor structure disposed on the first face, from a second face side. The laser beam irradiated along a first direction parallel to the second face of the sapphire substrate is focused inside the sapphire substrate to thereby create a modified portion in the sapphire substrate along the first direction. The wafer is severed and separated into a number of semiconductor elements following the formation of a modified portion. In the step of forming a modified portion, the laser beam is focused closer to the second face than to the first face in a thickness direction of the sapphire substrate.

公开(公告)号：US20240001622A1

公开(公告)日：2024-01-04

申请号：US18343299

申请日：2023-06-28

Applicant: Nichia Corporation ,  Laser Systems Inc.

Inventor： Ryota TAOKA ,  Ryota TAKAO ,  Minoru YAMAMOTO ,  Hiroaki TAMEMOTO ,  Hiroshi YAGUCHI

IPC: B29C65/16 ,  B23K26/082 ,  B23K26/324

CPC classification number: B29C65/1661 ,  B29C65/1638 ,  B23K26/082 ,  B23K26/324

Abstract: A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.

公开(公告)号：US20210036182A1

公开(公告)日：2021-02-04

申请号：US16945729

申请日：2020-07-31

Applicant: NICHIA CORPORATION

Inventor： Masayuki IBARAKI ,  Minoru YAMAMOTO ,  Naoto INOUE ,  Hiroaki TAMEMOTO

IPC: H01L33/00 ,  H01L33/20 ,  H01L25/075

Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

公开(公告)号：US20230138592A1

公开(公告)日：2023-05-04

申请号：US17964034

申请日：2022-10-12

Applicant: NICHIA CORPORATION ,  HAMAMATSU PHOTONICS K.K.

Inventor： Naoto INOUE ,  Minoru YAMAMOTO ,  Taichi OKUBO ,  Hiroaki TAMEMOTO ,  Ryota SUGIO ,  Yusuke SEKIMOTO

IPC: H01L33/00

Abstract: A method for manufacturing a light-emitting element includes preparing a wafer; a laser beam irradiation process; and a separation process. The laser beam irradiation process includes a first irradiation process of forming a plurality of first modified portions, and a second irradiation process of forming a plurality of second modified portions. The second modified portions are formed in the second irradiation process so that a length in a thickness direction of the sapphire substrate of the second modified portions is greater than a length in the thickness direction of the first modified portions.

公开(公告)号：US20220371130A1

公开(公告)日：2022-11-24

申请号：US17763379

申请日：2020-08-07

Applicant: NICHIA CORPORATION ,  HAMAMATSU PHOTONICS K.K.

Inventor： Hiroaki TAMEMOTO ,  Minoru YAMAMOTO ,  Yusuke SEKIMOTO ,  Ryota SUGIO ,  Tominori NAKAMURA

IPC: B23K26/53 ,  B23K26/046 ,  B23K26/0622

Abstract: This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

公开(公告)号：US20230387344A1

公开(公告)日：2023-11-30

申请号：US18310002

申请日：2023-05-01

Applicant: NICHIA CORPORATION

Inventor： Yoshiki YAMAGUCHI ,  Hiroki HAYASHI ,  Satoshi OKUMURA ,  Minoru YAMAMOTO ,  Hiroaki TAMEMOTO

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L2933/0066

Abstract: A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

公开(公告)号：US20210005777A1

公开(公告)日：2021-01-07

申请号：US16908354

申请日：2020-06-22

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Minoru YAMAMOTO ,  Satoshi OKUMURA ,  Hiroki OKAMOTO ,  Hiroaki TAMEMOTO

IPC: H01L33/00

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

公开(公告)号：US20250040322A1

公开(公告)日：2025-01-30

申请号：US18780099

申请日：2024-07-22

Applicant: NICHIA CORPORATION

Inventor： Mitsuo HAMADA ,  Hiroaki TAMEMOTO ,  Minoru YAMAMOTO ,  Ryota TAOKA ,  Kenta NISHIHARA

IPC: H01L33/58

Abstract: A method of manufacturing an optical member includes: providing a polycrystalline wavelength conversion member including phosphor particles and having a first surface and a second surface opposite to the first surface; forming a modified portion inside the wavelength conversion member by focusing laser light inside the wavelength conversion member; and cleaving the wavelength conversion member with the modified portion being a starting point, which includes pressing the wavelength conversion member from a first surface side.

公开(公告)号：US20220324180A1

公开(公告)日：2022-10-13

申请号：US17847928

申请日：2022-06-23

Applicant: Laser Systems Inc. ,  NICHIA CORPORATION

Inventor： Yuichi ASAKAWA ,  Yasuyuki TSUBOI ,  Hiroaki TAMEMOTO ,  Ryota TAOKA ,  Minoru YAMAMOTO

IPC: B29C65/16 ,  B29C65/00

Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.