公开(公告)号：US20220208975A1

公开(公告)日：2022-06-30

申请号：US17139636

申请日：2020-12-31

Applicant: NXP B.V.

Inventor： Ibrahim Khalil ,  Bernhard Grote ,  Humayun Kabir ,  Bruce McRae Green

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate and disposed between the first current-carrying electrode and a second current-carrying electrode and over the first dielectric layer. A first conductive element is formed over the first dielectric layer, adjacent the control electrode and between the control electrode and the second current-carrying electrode. A second dielectric layer is disposed over the control electrode and over the first conductive element. A second conductive element is disposed over the second dielectric layer and over the first conductive element.

公开(公告)号：US11923424B2

公开(公告)日：2024-03-05

申请号：US17139636

申请日：2020-12-31

Applicant: NXP B.V.

Inventor： Ibrahim Khalil ,  Bernhard Grote ,  Humayun Kabir ,  Bruce McRae Green

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/402 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/78

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate and disposed between the first current-carrying electrode and a second current-carrying electrode and over the first dielectric layer. A first conductive element is formed over the first dielectric layer, adjacent the control electrode and between the control electrode and the second current-carrying electrode. A second dielectric layer is disposed over the control electrode and over the first conductive element. A second conductive element is disposed over the second dielectric layer and over the first conductive element.

公开(公告)号：US20240250130A1

公开(公告)日：2024-07-25

申请号：US18593544

申请日：2024-03-01

Applicant: NXP B.V.

Inventor： Ibrahim Khalil ,  Bernhard Grote ,  Humayun Kabir ,  Bruce McRae Green

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/402 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/78

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate and disposed between the first current-carrying electrode and a second current-carrying electrode and over the first dielectric layer. A first conductive element is formed over the first dielectric layer, adjacent the control electrode and between the control electrode and the second current-carrying electrode. A second dielectric layer is disposed over the control electrode and over the first conductive element. A second conductive element is disposed over the second dielectric layer and over the first conductive element. An opening in the second dielectric layer couples the first conductive element to the second conductive element.