SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRIC LAYERS AND METHOD OF FABRICATION THEREFOR

    公开(公告)号:US20220208975A1

    公开(公告)日:2022-06-30

    申请号:US17139636

    申请日:2020-12-31

    Applicant: NXP B.V.

    Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate and disposed between the first current-carrying electrode and a second current-carrying electrode and over the first dielectric layer. A first conductive element is formed over the first dielectric layer, adjacent the control electrode and between the control electrode and the second current-carrying electrode. A second dielectric layer is disposed over the control electrode and over the first conductive element. A second conductive element is disposed over the second dielectric layer and over the first conductive element.

    Transistors with source-connected field plates

    公开(公告)号:US12148820B2

    公开(公告)日:2024-11-19

    申请号:US17645286

    申请日:2021-12-20

    Applicant: NXP B.V.

    Abstract: Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a control electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers.

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