公开(公告)号：US09305789B2

公开(公告)日：2016-04-05

申请号：US14693118

申请日：2015-04-22

Applicant: NXP B.V.

Inventor： Johannes Josephus Theodorus Marinus Donkers ,  Stephan Bastiaan Simon Heil ,  Jos aan de Stegge

IPC: H01L29/00 ,  H01L21/285 ,  H01L21/283 ,  H01L29/47 ,  H01L29/20

CPC classification number: H01L21/28581 ,  H01L21/283 ,  H01L29/2003 ,  H01L29/47 ,  H01L29/475 ,  H01L2924/01022 ,  H01L2924/01074

Abstract: A semiconductor device comprising at least one active layer on a substrate and a a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer.

Abstract translation: 一种半导体器件，其包括在衬底上的至少一个有源层和与所述至少一个有源层的肖特基接触，所述肖特基接触包括与所述至少一个有源层电耦合的至少钛和氮的主体。

公开(公告)号：US20150325667A1

公开(公告)日：2015-11-12

申请号：US14693118

申请日：2015-04-22

Applicant: NXP B.V.

Inventor： Johannes Josephus Theodorus Marinus Donkers ,  Stephan Bastiaan Simon Heil ,  Jos aan de Stegge

IPC: H01L29/47 ,  H01L21/283

CPC classification number: H01L21/28581 ,  H01L21/283 ,  H01L29/2003 ,  H01L29/47 ,  H01L29/475 ,  H01L2924/01022 ,  H01L2924/01074

Abstract: A semiconductor device comprising at least one active layer on a substrate and a a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer.

Abstract translation: 一种半导体器件，其包括在衬底上的至少一个有源层和与所述至少一个有源层的肖特基接触，所述肖特基接触包括与所述至少一个有源层电耦合的至少钛和氮的主体。