SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20150123241A1

    公开(公告)日:2015-05-07

    申请号:US14500889

    申请日:2014-09-29

    Applicant: NXP B.V.

    Abstract: An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more uniform temperature peaks for all the unit cells across the device area, so that the hot spot which is prone to breakdown can be avoided, thus the safe operating area of the device can be improved. Also the array sacrifice less area of the device, therefore results in low Rdson.

    Abstract translation: 在具有多个单元电池的SOI功率器件中引入了集成散热器阵列,其可以用于降低温度上升,从而在器件区域上的所有单元电池获得更均匀的温度峰值,使得易于 可以避免故障,从而可以提高设备的安全工作面积。 此外,阵列牺牲了较少的器件面积,因此导致低Rdson。

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