公开(公告)号：US06649969B2

公开(公告)日：2003-11-18

申请号：US09908895

申请日：2001-07-20

申请人： Naoki Tsuji ,  Akinobu Teramoto ,  Kazutoshi Wakao

发明人： Naoki Tsuji ,  Akinobu Teramoto ,  Kazutoshi Wakao

IPC分类号： H01L29788

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： The invention provides a nonvolatile semiconductor device, or the like. According to the fabrication process of the present invention, silica glass containing boron or phosphorous is used as a material of high absorbency, which is treated in the vapor phase HF atmosphere and, therefore, selective etching of silica glass, only, of high absorbency becomes possible so that a void area can be formed beneath the fin of the floating gate. Accordingly, the absolute value of the parasitic capacitance between the floating gate and the substrate is decreased. In addition, the degree of the fluctuation of the parasitic capacitance due to the manufacturing process can be restricted to a low level. Accordingly, a nonvolatile semiconductor device of high performance can be gained without lowering the yield.

摘要翻译： 本发明提供一种非易失性半导体器件等。 根据本发明的制造方法，使用含有硼或磷的二氧化硅玻璃作为吸收性高的材料，其在气相HF气氛中进行处理，因此，只有具有高吸收性的石英玻璃的选择性蚀刻成为 可能使浮动栅极的鳍下方形成空隙区域。 因此，浮置栅极和衬底之间的寄生电容的绝对值减小。 此外，由于制造过程而引起的寄生电容的波动程度可以被限制在低的水平。 因此，可以获得高性能的非易失性半导体器件而不降低产量。

公开(公告)号：US06472700B2

公开(公告)日：2002-10-29

申请号：US09333653

申请日：1999-06-16

申请人： Kazutoshi Wakao ,  Akinobu Teramoto ,  Masahiko Fujisawa

发明人： Kazutoshi Wakao ,  Akinobu Teramoto ,  Masahiko Fujisawa

IPC分类号： H01L29792

CPC分类号： H01L27/10855 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/10814 ,  Y10S257/90

摘要： A semiconductor device capable of suppressing increase in the junction leakage current and preventing deterioration in the electric characteristics even when the device is miniaturized, and a method of manufacturing thereof are attained. The semiconductor device includes a semiconductor substrate, an isolation insulator, a gate electrode, a coating film, an interlayer insulation film, and a sidewall coating film. The semiconductor substrate has a main surface. The isolation insulator is formed at the main surface of the semiconductor substrate and isolates a conductive region. The gate electrode is formed in the conductive region. The coating film is formed on the isolation insulator, and it has a sidewall and a film thickness of at most that of the gate electrode. The interlayer insulation film is formed on the coating film. The sidewall coating film is formed on the sidewall of the coating film, and it includes a material having an etching rate different from that of the interlayer insulation film.

摘要翻译： 一种能够抑制结漏电流的增加并且即使在器件小型化时也防止电特性劣化的半导体器件及其制造方法。 半导体器件包括半导体衬底，隔离绝缘体，栅电极，涂膜，层间绝缘膜和侧壁涂覆膜。 半导体衬底具有主表面。 隔离绝缘体形成在半导体衬底的主表面并隔离导电区域。 栅电极形成在导电区域中。 该涂膜形成在隔离绝缘体上，并且其侧壁和至多为栅极电极的膜厚度。 层间绝缘膜形成在涂膜上。 侧壁涂膜形成在涂膜的侧壁上，并且其包括具有与层间绝缘膜的蚀刻速率不同的蚀刻速率的材料。

公开(公告)号：US06174783B1

公开(公告)日：2001-01-16

申请号：US09121113

申请日：1998-07-23

申请人： Kazutoshi Wakao

发明人： Kazutoshi Wakao

IPC分类号： H01L2176

CPC分类号： H01L21/76224

摘要： The front surface of a semiconductor substrate is formed with a trench. An insulating film is formed on the front surface of the semiconductor substrate including the trench while the bottom of the trench is kept at a higher temperature than the surface opening of the trench. To this end, the back surface of the semiconductor substrate is kept at a higher temperature than the front surface. This is done by heating the back surface of the semiconductor substrate with a halogen lamp. Alternatively, the front surface temperature is made lower than the back surface temperature by blowing a gas for forming an insulating film against the front surface of the semiconductor substrate.

摘要翻译： 半导体衬底的前表面形成有沟槽。 在包括沟槽的半导体衬底的前表面上形成绝缘膜，同时沟槽的底部保持在比沟槽的表面开口更高的温度。 为此，半导体衬底的背面保持在比前表面更高的温度。 这是通过用卤素灯加热半导体衬底的背表面来完成的。 或者，通过向半导体基板的前表面吹入用于形成绝缘膜的气体，使前表面温度低于背面温度。

公开(公告)号：US20100175477A1

公开(公告)日：2010-07-15

申请号：US12663130

申请日：2008-01-30

申请人： Takashi Kasai ,  Kazutoshi Wakao ,  Takeshi Matsuo ,  Takayoshi Onishi ,  Akane Takahashi

发明人： Takashi Kasai ,  Kazutoshi Wakao ,  Takeshi Matsuo ,  Takayoshi Onishi ,  Akane Takahashi

IPC分类号： G01H11/00

CPC分类号： G01H11/06 ,  H04R19/005

摘要： A vibrating electrode plate 24 that senses a sound pressure faces a counter electrode plate 25 to constitute a capacitance type acoustic sensor. In the counter electrode plate 25, acoustic perforations 31 are opened in order to pass vibration, and plural projections 36 are provided on a surface facing the vibrating electrode plate 24. An interval between the projections 36 is decreased in a region where the vibrating electrode plate 24 has high flexibility to easily generate local sticking with the counter electrode plate 25. The interval between the projections 36 is increased in a region where the vibrating electrode plate 24 has low flexibility to hardly generate local sticking with the counter electrode plate 25. The projections thus arranged prevent firm fixing of the vibrating electrode plate to the counter electrode plate and interruption of vibration of the vibrating electrode plate.

摘要翻译： 感测声压的振动电极板24面对对电极板25构成电容型声传感器。 在对置电极板25中，声穿孔31打开以通过振动，并且在面对振动电极板24的表面上设置多个突起36.在振动电极板的区域中，突起36之间的间隔减小 24具有很高的灵活性，容易产生与对电极板25的局部粘附。突起36之间的间隔在振动电极板24具有低柔性的区域中增加，几乎不会产生与对电极板25的局部粘附。 从而防止振动电极板牢固地固定在对电极板上，并阻止振动电极板振动。

公开(公告)号：US06734488B1

公开(公告)日：2004-05-11

申请号：US09499037

申请日：2000-02-07

申请人： Kazuhiro Aihara ,  Junichi Tsuchimoto ,  Yutaka Inaba ,  Kazutoshi Wakao

发明人： Kazuhiro Aihara ,  Junichi Tsuchimoto ,  Yutaka Inaba ,  Kazutoshi Wakao

IPC分类号： H01L27108

CPC分类号： H01L28/56 ,  H01L21/31604 ,  H01L27/10855

摘要： A semiconductor device with a capacitor having a charge retaining capability improved by preventing generation of a leakage current in a capacitor dielectric film, and a manufacturing method of the same are provided. An indium oxide film is formed to continuously cover the upper surfaces of a tungsten film and an interlayer oxide film. A tantalum oxide film is formed to continuously cover the surface of the indium oxide film and a portion of the upper surface of the interlayer oxide film. Another indium oxide film is formed to cover the upper surface of the tantalum oxide film.

摘要翻译： 提供一种具有通过防止电容器电介质膜中的漏电流产生而具有电荷保持能力的电容器的半导体器件及其制造方法。 形成氧化铟膜，以连续地覆盖钨膜和层间氧化膜的上表面。 形成氧化钽膜，以连续地覆盖氧化铟膜的表面和层间氧化膜的上表面的一部分。 形成另一氧化铟膜以覆盖氧化钽膜的上表面。

公开(公告)号：US08379887B2

公开(公告)日：2013-02-19

申请号：US12663130

申请日：2008-01-30

申请人： Takashi Kasai ,  Kazutoshi Wakao ,  Takeshi Matsuo ,  Takayoshi Onishi ,  Akane Takahashi

发明人： Takashi Kasai ,  Kazutoshi Wakao ,  Takeshi Matsuo ,  Takayoshi Onishi ,  Akane Takahashi

IPC分类号： H04R25/00

CPC分类号： G01H11/06 ,  H04R19/005

摘要： A vibrating electrode plate that senses a sound pressure faces a counter electrode plate to constitute a capacitance type acoustic sensor. In the counter electrode plate, acoustic perforations are opened in order to pass vibration, and plural projections are provided on a surface facing the vibrating electrode plate. An interval between the projections is decreased in a region where the vibrating electrode plate has high flexibility to easily generate local sticking with the counter electrode plate. The interval between the projections is increased in a region where the vibrating electrode plate has low flexibility to hardly generate local sticking with the counter electrode plate. The projections thus arranged prevent firm fixing of the vibrating electrode plate to the counter electrode plate and interruption of vibration of the vibrating electrode plate.

摘要翻译： 感测声压的振动电极板面对对电极板构成电容式声学传感器。 在对电极板中，为了通过振动而打开声孔，并且在面向振动电极板的表面上设置多个突起。 在振动电极板具有高柔韧性的区域中，突起之间的间隔减小，从而容易地产生与对电极板的局部粘附。 突起之间的间隔在振动电极板具有低柔性的区域中增加，从而几乎不会产生与对电极板的局部粘附。 这样设置的突出部防止振动电极板固定在对置电极板上，并且中断振动电极板的振动。