公开(公告)号：US20240234619A1

公开(公告)日：2024-07-11

申请号：US18406630

申请日：2024-01-08

Applicant: National Yang Ming Chiao Tung University

Inventor： Po-Tsun LIU ,  Yu-Chuan CHIU ,  Jia-Lin HUANG

IPC: H01L31/113 ,  H01L31/032 ,  H01L31/20

CPC classification number: H01L31/1136 ,  H01L31/032 ,  H01L31/20

Abstract: A method for manufacturing a transparent thin film transistor-based photosensitive device includes preparing a semiconductor substrate unit including a gate electrode layer, forming a gate insulator layer by depositing a high dielectric constant material using plasma-assisted atomic layer deposition to cover the gate electrode layer, forming a sensing channel layer made of an indium oxide-based material on the gate insulator layer in a position corresponding to the gate electrode layer by sputtering and doping nitrogen into the sensing channel layer, and forming a source electrode and a drain electrode on two opposite end portions of the sensing channel layer, respectively.