公开(公告)号：US20180315882A1

公开(公告)日：2018-11-01

申请号：US15581549

申请日：2017-04-28

申请人： Infineon Technologies AG

发明人： Hans-Joachim Schulze ,  Johannes Hacker

IPC分类号： H01L31/115 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0288 ,  H01L31/0224

CPC分类号： H01L31/115 ,  H01L31/022408 ,  H01L31/0288 ,  H01L31/035272 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/20

摘要： A method for forming a semiconductor device includes forming an amorphous semiconductor layer adjacent to a lightly doped region of a semiconductor wafer. The lightly doped region forms at least part of a back side of the semiconductor wafer, and the lightly doped region has a first conductivity type. The method further includes incorporating dopants into the amorphous semiconductor layer during or after forming the amorphous semiconductor layer. The method further includes annealing the amorphous semiconductor layer to transform at least a part of the amorphous semiconductor layer into a substantially monocrystalline semiconductor layer and to form a highly doped region in the monocrystalline semiconductor layer at the back side of the semiconductor wafer. The highly doped region has the first conductivity type.

公开(公告)号：US09994684B2

公开(公告)日：2018-06-12

申请号：US14691214

申请日：2015-04-20

申请人： NISSAN CHEMICAL INDUSTRIES, LTD.

发明人： Hitoshi Furusho ,  Yuki Nohara ,  Hisayuki Watanabe ,  Yuichi Goto

IPC分类号： C08J3/28 ,  H01L21/02 ,  H01L21/225 ,  H01L31/0288 ,  H01L31/18 ,  H01L31/20 ,  B01J19/08

CPC分类号： C08J3/28 ,  B01J19/081 ,  B01J19/087 ,  C08J2383/16 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/02628 ,  H01L21/2254 ,  H01L31/0288 ,  H01L31/182 ,  H01L31/20 ,  H05H2245/123 ,  Y02E10/546 ,  Y02P70/521

摘要： Described is a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method including: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.

公开(公告)号：US20180138323A1

公开(公告)日：2018-05-17

申请号：US15574994

申请日：2016-02-24

申请人： SHARP KABUSHIKI KAISHA

发明人： MASATOMI HARADA ,  KENICHI HIGASHI ,  TAKESHI KAMIKAWA ,  TOSHIHIKO SAKAI ,  TOKUAKI KUNIYOSHI ,  KAZUYA TSUJINO ,  LIUMIN ZOU

IPC分类号： H01L31/02 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/02 ,  C23C16/24 ,  C23C16/56 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/20 ,  Y02E10/50

摘要： A photovoltaic device (1) includes: an i-type amorphous semiconductor layer (102i) formed in contact with one of the surfaces of a semiconductor substrate (101); p-type amorphous semiconductor strips (102p) spaced apart from each other and provided on the i-type amorphous semiconductor layer (102i); and n-type amorphous semiconductor strips (102n) spaced apart from each other and provided on the i amorphous semiconductor layer (102i), each n-type amorphous semiconductor strip (102n) being adjacent to at least one of the p-type amorphous semiconductor strips (102p) as traced along an in-plane direction of the semiconductor substrate (101). The photovoltaic device (1) further includes electrodes (103) as a protection layer formed in contact with the i-type amorphous semiconductor layer (102) between adjacent p-type amorphous semiconductor strips (102) and between adjacent n-type amorphous semiconductor strips (102n).

公开(公告)号：US09806211B2

公开(公告)日：2017-10-31

申请号：US14727071

申请日：2015-06-01

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Oki Gunawan ,  Jeehwan Kim ,  David B. Mitzi ,  Devendra K. Sadana ,  Teodor K. Todorov

IPC分类号： H01L21/00 ,  H01L31/032 ,  H01L31/18 ,  H01L31/076 ,  H01L31/078 ,  C23C14/34 ,  C25D7/12 ,  H01L31/20

CPC分类号： H01L31/0326 ,  C23C14/34 ,  C25D7/12 ,  H01L31/076 ,  H01L31/078 ,  H01L31/18 ,  H01L31/20 ,  Y02E10/548

摘要： A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

公开(公告)号：US09793422B2

公开(公告)日：2017-10-17

申请号：US15046397

申请日：2016-02-17

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Sadaji Tsuge

IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L31/20 ,  H01L31/048 ,  H01L31/0747 ,  H02S30/10 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/048 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/20 ,  H01L31/202 ,  H02S30/10 ,  Y02E10/50

摘要： The present invention is to grant a margin in the control of a depth of a groove when removing a transparent insulation layer after the transparent insulation layer is formed on the entire surface of the transparent conductive layer, thereby provide a solar cell which has superior productivity in mass manufacturing. A solar cell includes an n-type amorphous silicon layer formed on a front-surface side of an n-type monocrystalline silicon the substrate; a front-surface side transparent conductive layer formed on the n-type amorphous silicon layer; a p-type amorphous silicon layer formed on a rear-surface-side of the substrate; and a rear-surface-side transparent conductive layer formed on the p-type amorphous silicon layer. A front-surface side collector electrode is formed by plating on the front-surface side transparent conductive layer whereas a rear-surface-side collector electrode is formed on the rear-surface-side transparent conductive layer by printing.

公开(公告)号：US09620664B2

公开(公告)日：2017-04-11

申请号：US14482575

申请日：2014-09-10

申请人： Mossey Creek Technologies Inc.

发明人： John Carberry

IPC分类号： H01L31/18 ,  C30B29/34 ,  B05D5/12 ,  C30B29/06 ,  B05D1/12 ,  B05D3/02 ,  C30B33/02 ,  H01L31/20 ,  H01L21/67 ,  H01L21/673 ,  C30B35/00

CPC分类号： H01L31/18 ,  B05D1/12 ,  B05D3/0281 ,  B05D5/12 ,  C30B29/06 ,  C30B29/34 ,  C30B33/02 ,  C30B35/002 ,  H01L21/67 ,  H01L21/67005 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67121 ,  H01L21/673 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/20 ,  H01L31/202 ,  H01L31/208

摘要： A tool useful in the manufacture of a semiconductor is disclosed. A mold is providing having an interior defining a planar capillary space. A coating substantially covers at least the planar capillary space of the graphite member. The coating is substantially non-reactive to silicon at temperatures greater than approximately 1420 degrees Centigrade.

公开(公告)号：US09502462B1

公开(公告)日：2016-11-22

申请号：US14802035

申请日：2015-07-17

申请人： Steven E. Koenck ,  David W. Jensen ,  Robert G. Brown

发明人： Steven E. Koenck ,  David W. Jensen ,  Robert G. Brown

IPC分类号： H01L31/052 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0352

CPC分类号： H01L27/14689 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L31/02327 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/20 ,  Y10S977/773 ,  Y10S977/89 ,  Y10S977/954

摘要： An integrated circuit (IC) sensor is described. The IC sensor includes a pixel array and IC components. The pixel array has a plurality of pixels, wherein each pixel includes an EMR absorption region including a detector material having a plurality of nanoparticles embedded in a matrix material and exhibiting a nano-plasmonic property. The IC components are arranged to provide amplification of a voltage signal from the EMR absorption region, and to select the voltage signal from the EMR absorption region.

公开(公告)号：US20160336464A1

公开(公告)日：2016-11-17

申请号：US15220394

申请日：2016-07-27

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Masato SHIGEMATSU ,  Naofumi HAYASHI

IPC分类号： H01L31/0224 ,  H01L31/20

CPC分类号： H01L31/022441 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes: a semiconductor substrate having a light-receiving surface and a back surface; a first-conductivity-type first semiconductor layer on the back surface; a second-conductivity-type second semiconductor layer on the back surface; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; and an insulating layer in a boundary region between a first-conductivity-type region of the first semiconductor layer and a second-conductivity-type region of the second semiconductor layer. The insulating layer has an inclined side surface adjacent the second-conductivity-type region inclined such that the thickness of the insulating layer decreases with decreasing distance from the second-conductivity-type region. The width of the inclined surface in a direction perpendicular to the thickness direction of the insulating layer and toward the second-conductivity-type region is 10 to 300 times the thickness of the insulating layer in a region excluding the inclined surface.

摘要翻译： 太阳能电池包括：具有受光面和背面的半导体基板; 背面上的第一导电型第一半导体层; 位于背面的第二导电型第二半导体层; 电连接到第一半导体层的第一电极; 电连接到第二半导体层的第二电极; 以及在第一半导体层的第一导电型区域和第二半导体层的第二导电型区域之间的边界区域中的绝缘层。 绝缘层具有与第二导电类型区域相邻的倾斜侧表面，使得绝缘层的厚度随着与第二导电类型区域的距离的减小而减小。 倾斜表面在与绝缘层的厚度方向垂直的方向上朝向第二导电型区域的宽度为不包括倾斜表面的区域中绝缘层的厚度的10至300倍。

公开(公告)号：US09472711B2

公开(公告)日：2016-10-18

申请号：US14376290

申请日：2012-03-29

申请人： Tsutomu Matsuura ,  Hiroya Yamarin ,  Hidetada Tokioka

发明人： Tsutomu Matsuura ,  Hiroya Yamarin ,  Hidetada Tokioka

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/042 ,  H01L31/075 ,  H01L31/04

CPC分类号： H01L31/1884 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/04 ,  H01L31/042 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A back contact heterojunction photoelectric conversion device, that obtain junctions that are nearly ohmic contacts by integrally forming a transparent conductive film including an electrode directly on a p-type amorphous silicon film and a transparent conductive oxide directly on an n-type amorphous silicon film. A method of manufacturing the device includes: integrally forming an oxide electrode layer on the n-type amorphous silicon film and the p-type amorphous silicon film; and applying plasma, under a condition that a mask is disposed on the transparent conductive film covering either the n-type amorphous silicon film or the p-type amorphous silicon film, to exposed portions of transparent conductive film.

摘要翻译： 一种背接触异质结光电转换装置，其通过直接在p型非晶硅膜上直接形成直接包含电极的透明导电膜和直接在n型非晶硅膜上的透明导电氧化物来获得接近欧姆接触的结。 一种制造该器件的方法包括：在n型非晶硅膜和p型非晶硅膜上一体地形成氧化物电极层; 并且在将掩模设置在覆盖n型非晶硅膜或p型非晶硅膜的透明导电膜上的条件下，对透明导电膜的露出部分施加等离子体。

公开(公告)号：US09450132B2

公开(公告)日：2016-09-20

申请号：US14514552

申请日：2014-10-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Sho Kato ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

IPC分类号： H01L31/077 ,  H01L31/20 ,  H01L21/02 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/077 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the butler layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

摘要翻译： 目的在于提高光电转换装置的转换效率，而不增加制造步骤。 光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层 和非晶区域，并且设置在管状层上方，以及设置在第二半导体层上的具有与一种导电类型相反的导电类型的第三半导体层。 单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。