公开(公告)号：US20240304743A1

公开(公告)日：2024-09-12

申请号：US18266809

申请日：2021-12-03

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Anyi MEI ,  Hongwei HAN

IPC: H01L31/113 ,  H10K30/65

CPC classification number: H01L31/1136 ,  H10K30/65

Abstract: This disclosure relates to a dielectric layer response-based field effect transistor photodetector, comprising a gate, a photoelectric response composite dielectric layer, a carrier transport layer, a source, and a drain. The composite dielectric layer is formed by compounding a photoelectric response dielectric and a charge blocking insulating dielectric; the carrier transport layer is used for transporting electrons or holes, the photoelectric response dielectric is used for absorbing light under illumination to generate electrons, holes or excitons, and the charge blocking insulating dielectric is used for limiting passage of the electrons, holes or excitons. The generation of photogenerated electrons, holes or excitons in the composite dielectric layer and the movement of the photogenerated electrons, holes or excitons limited within the photoelectric response dielectric cause the equivalent permittivity of the composite dielectric layer to change, causing changes in carrier concentration and conductivity of the carrier transport layer and achieving photoelectric detection.

公开(公告)号：US20240250198A1

公开(公告)日：2024-07-25

申请号：US18422928

申请日：2024-01-25

Applicant: University-Industry Cooperation Group of Kyung Hee University

Inventor： Seong Jun Kang ,  Jun Hyung Jeong

IPC: H01L31/113 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/88 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/18

CPC classification number: H01L31/1136 ,  C09K11/883 ,  H01L31/0296 ,  H01L31/035218 ,  H01L31/0384 ,  H01L31/1828 ,  B82Y20/00 ,  B82Y40/00

Abstract: The present disclosure relates to a photoelectric device based on quantum dots with a zirconium oxide (ZrO2) layer and its manufacturing method. The photoelectric device includes a substrate; a zinc oxide layer stacked on the substrate; a quantum dots (QDs) layer stacked on the zinc oxide layer; and a zirconium oxide layer stacked on the QDs layer. According to the present disclosure, the zirconium oxide layer enables the photoelectric device to secure stability in the atmosphere, and the removal of defects caused by ligands of quantum dots, thereby anticipating improved performance of the photoelectric device.

公开(公告)号：US20240234619A1

公开(公告)日：2024-07-11

申请号：US18406630

申请日：2024-01-08

Applicant: National Yang Ming Chiao Tung University

Inventor： Po-Tsun LIU ,  Yu-Chuan CHIU ,  Jia-Lin HUANG

IPC: H01L31/113 ,  H01L31/032 ,  H01L31/20

CPC classification number: H01L31/1136 ,  H01L31/032 ,  H01L31/20

Abstract: A method for manufacturing a transparent thin film transistor-based photosensitive device includes preparing a semiconductor substrate unit including a gate electrode layer, forming a gate insulator layer by depositing a high dielectric constant material using plasma-assisted atomic layer deposition to cover the gate electrode layer, forming a sensing channel layer made of an indium oxide-based material on the gate insulator layer in a position corresponding to the gate electrode layer by sputtering and doping nitrogen into the sensing channel layer, and forming a source electrode and a drain electrode on two opposite end portions of the sensing channel layer, respectively.

公开(公告)号：US20240234617A9

公开(公告)日：2024-07-11

申请号：US17769609

申请日：2020-03-26

Applicant: NANJING UNIVERSITY

Inventor： Feng MIAO ,  Shijun LIANG ,  Chenyu WANG

IPC: H01L31/113 ,  H01L31/0224 ,  H01L31/18 ,  H04N25/47

CPC classification number: H01L31/1136 ,  H01L31/022408 ,  H01L31/18 ,  H04N25/47 ,  H01L31/032

Abstract: A retinomorphic sensor array and a convolution method are used for image processing therefor, wherein the optoelectronic sensor has a vertically stacked heterostructure provided with a bottom electrode, a dielectric layer, a channel layer, a source electrode and a drain electrode on a base, the source and drain electrode are mutually opposite and are arranged at two ends of the channel layer, the bottom electrode, the source and drain electrode are made of a material used by a flexible electrode, an inert metal or a semimetal, the dielectric layer is made of an insulating material, the channel layer is made of a bipolar material, and the base comprises a substrate and an insulating material layer generated on a surface of the substrate.

公开(公告)号：US12015082B2

公开(公告)日：2024-06-18

申请号：US17608942

申请日：2020-05-06

Applicant: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

Inventor： Alexander Bähr ,  Peter Lechner ,  Jelena Ninkovic ,  Rainer Richter ,  Florian Schopper ,  Johannes Treis

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L31/113 ,  H01L21/265

CPC classification number: H01L29/7838 ,  H01L29/105 ,  H01L29/42356 ,  H01L29/66484 ,  H01L29/66492 ,  H01L29/7832 ,  H01L29/7835 ,  H01L31/1136 ,  H01L21/26513 ,  H01L21/26586

Abstract: The invention relates to a DEPFET comprising: a semiconductor substrate (100) of a first conduction type, which has a first main surface (101) and a second main surface (102), which are opposite one another; a source terminal region (1s) of a second conduction type on the first main surface (101); a drain terminal region (1d) of a second conduction type; a channel region (10), which is arranged between the source terminal region (1s) and the drain terminal region (1d); a gate electrode (11), which is separated from the channel region (10) by a gate insulator (6); a rear activation region (104) of a second conduction type, which is formed on the second main surface (102); and a substrate doping increase region (2) of a first conduction type, which is formed at least under the source terminal region (1s) and under the channel region (10), the substrate doping increase region (2) having a signal charge control region (20) of the first conduction type below the gate electrode (11), in which signal charge control region the effective doping dose has a higher value than at other points of the substrate doping increase region (2) below the gate electrode.

公开(公告)号：US20240162367A1

公开(公告)日：2024-05-16

申请号：US18506163

申请日：2023-11-10

Applicant: Technion Research & Development Foundation Limited

Inventor： Elad KOREN ,  Debopriya DUTTA ,  Subhrajit MUKHERJEE

IPC: H01L31/113 ,  H01L31/032 ,  H01L31/18

CPC classification number: H01L31/1136 ,  H01L31/032 ,  H01L31/18

Abstract: A heterostructure system comprises a two-dimensional ferroelectric material on a dielectric substrate, and a two-dimensional semiconductor material having a first region disposed on the ferroelectric material and a second region disposed on the dielectric substrate, wherein an edge of the ferroelectric material is between the first region and the second region of the semiconductor material.

公开(公告)号：US11978747B2

公开(公告)日：2024-05-07

申请号：US17990325

申请日：2022-11-18

Applicant: Hoon Kim

Inventor： Hoon Kim

IPC: H01L27/146 ,  G02F1/1333 ,  G02F1/13357 ,  G06F3/041 ,  G06F3/042 ,  G06V40/13 ,  H01L31/036 ,  H01L31/113 ,  H10K59/40 ,  G02F1/133 ,  H10K59/60 ,  H10K59/65

CPC classification number: H01L27/1461 ,  G02F1/13338 ,  G02F1/133606 ,  G06F3/041662 ,  G06F3/04182 ,  G06F3/0421 ,  G06V40/1318 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14689 ,  H01L31/036 ,  H01L31/1136 ,  H10K59/40 ,  G02F1/13318 ,  H10K59/60 ,  H10K59/65

Abstract: A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

公开(公告)号：US11967665B2

公开(公告)日：2024-04-23

申请号：US17312616

申请日：2019-12-11

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Abdelkader Aliane ,  Jean-Louis Ouvrier-Buffet

IPC: H01L31/113 ,  G01J5/02 ,  G01J5/08 ,  G01J5/24

CPC classification number: H01L31/1136 ,  G01J5/024 ,  G01J5/0853 ,  G01J5/24

Abstract: A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

公开(公告)号：US11740746B2

公开(公告)日：2023-08-29

申请号：US17262086

申请日：2020-12-30

Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Inventor： Bao Zha

IPC: G06F3/044 ,  G06F3/01 ,  G06F3/03 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/113

CPC classification number: G06F3/0445 ,  G06F3/016 ,  G06F3/0304 ,  G06F3/0443 ,  H01L27/1446 ,  H01L31/02164 ,  H01L31/1136 ,  G06F2203/04111

Abstract: The present application discloses a sensor device and a display device. The sensor device includes a substrate, a light control component, a touch control component, and a functional dielectric layer, wherein the light control component and the touch component are disposed on the substrate, the touch component is disposed on the light control component, and the functional dielectric layer is disposed on a side of the touch control component away from the substrate and at least covers the touch control component, and configured to apply an electrostatic force to an external object when the external object is in contact with the functional dielectric layer.

公开(公告)号：US20230268449A1

公开(公告)日：2023-08-24

申请号：US18142114

申请日：2023-05-02

Applicant: Shanghai Tianma Microelectronics Co., Ltd.

Inventor： Linzhi WANG ,  Kerui XI ,  Kaidi ZHANG ,  Shun GONG ,  Yukun HUANG

IPC: H01L31/0224 ,  H01L31/113 ,  H01L27/144 ,  H01L31/18 ,  B81B7/02 ,  H01L31/20

CPC classification number: H01L31/022408 ,  H01L31/1136 ,  H01L27/1446 ,  H01L31/18 ,  B81B7/02 ,  H01L31/202 ,  H01L31/1804 ,  H01L31/022475 ,  B81B2201/058 ,  B81B2207/015

Abstract: A photosensitive transistor includes a substrate and a first semiconductor layer, a first gate, a first electrode, a second electrode and a second semiconductor layer which are located on a side of the substrate. The first semiconductor layer includes a first doped region, a second doped region and a channel region, the second semiconductor layer is in direct contact with the channel region, and an area of the second semiconductor layer is less than an area of the first semiconductor layer. The photosensitive transistor includes a main region and opening regions, and the opening regions are located at a periphery of the main region. The first electrode and the second electrode are in the same layer and insulated from each other and both surround the main region. The second semiconductor layer includes a main body portion located in the main region and auxiliary portions located in the opening regions.