公开(公告)号：US09520439B2

公开(公告)日：2016-12-13

申请号：US14034210

申请日：2013-09-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dominic Massetti ,  Yu Zheng

IPC: H01L27/146 ,  G01T1/20 ,  G01N23/083

CPC classification number: H01L27/14676 ,  G01N23/083 ,  G01T1/2018 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

Abstract: An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data.

Abstract translation: 用于捕获X射线图像数据和光学图像数据的图像传感器包括设置在半导体层中的X射线吸收层和多个光电二极管。 X射线吸收层配置为响应于接收的X射线辐射而发射光子。 设置在半导体层中的多个光电二极管被光学耦合以接收图像光以产生光学图像数据，并且被光学耦合以从X射线吸收层接收光子以产生X射线图像数据。

公开(公告)号：US20150085978A1

公开(公告)日：2015-03-26

申请号：US14034210

申请日：2013-09-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dominic Massetti ,  Yu Zheng

IPC: H01L27/146 ,  G01N23/04

CPC classification number: H01L27/14676 ,  G01N23/083 ,  G01T1/2018 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

Abstract: An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data.

Abstract translation: 用于捕获X射线图像数据和光学图像数据的图像传感器包括设置在半导体层中的X射线吸收层和多个光电二极管。 X射线吸收层配置为响应于接收的X射线辐射而发射光子。 设置在半导体层中的多个光电二极管被光学耦合以接收图像光以产生光学图像数据，并且被光学耦合以从X射线吸收层接收光子以产生X射线图像数据。