Quantum dot structure, method for producing a quantum dot structure, and light emitting device

    公开(公告)号:US12291661B2

    公开(公告)日:2025-05-06

    申请号:US17560083

    申请日:2021-12-22

    Abstract: A quantum dot structure is provided, the quantum dot structure comprising: a nanocrystalline core from a first semiconductor material, a nanocrystalline shell from a second semiconductor material on the nanocrystalline core, at least one encapsulation layer on the nanocrystalline shell, wherein functional groups are present within the at least one encapsulation layer and/or on the surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner. Further, a method for producing a quantum dot structure and a light emitting device are provided.

Patent Agency Ranking