公开(公告)号：US3683306A

公开(公告)日：1972-08-08

申请号：US3683306D

申请日：1969-10-28

Applicant: PHILIPS CORP

Inventor： BULTHUIS KORNELIS ,  SHANNON JOHN MARTIN

IPC: H01L27/08 ,  H01L29/8605 ,  H01C7/06

CPC classification number: H01L29/8605 ,  H01L27/0802 ,  Y10S148/049 ,  Y10S438/914 ,  Y10S438/934

Abstract: A temperature compensated semiconductor resistor is described wherein electrically inactive neutral impurities are included in the semiconductor. The neutral impurities do not contribute free carriers to offset mobility reduction due to lattice scattering, but instead provide an impurity scattering dependence that temperature compensates.

Abstract translation: 描述了温度补偿半导体电阻器，其中在半导体中包括电惰性中性杂质。 中性杂质不会引起自由载流子以抵消由于晶格散射引起的迁移率降低，而是提供温度补偿的杂质散射依赖性。