公开(公告)号：US3683306A

公开(公告)日：1972-08-08

申请号：US3683306D

申请日：1969-10-28

Applicant: PHILIPS CORP

Inventor： BULTHUIS KORNELIS ,  SHANNON JOHN MARTIN

IPC: H01L27/08 ,  H01L29/8605 ,  H01C7/06

CPC classification number: H01L29/8605 ,  H01L27/0802 ,  Y10S148/049 ,  Y10S438/914 ,  Y10S438/934

Abstract: A temperature compensated semiconductor resistor is described wherein electrically inactive neutral impurities are included in the semiconductor. The neutral impurities do not contribute free carriers to offset mobility reduction due to lattice scattering, but instead provide an impurity scattering dependence that temperature compensates.

Abstract translation: 描述了温度补偿半导体电阻器，其中在半导体中包括电惰性中性杂质。 中性杂质不会引起自由载流子以抵消由于晶格散射引起的迁移率降低，而是提供温度补偿的杂质散射依赖性。

公开(公告)号：US3918070A

公开(公告)日：1975-11-04

申请号：US41943573

申请日：1973-11-27

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN

IPC: G11C27/04 ,  G09F9/33 ,  H01L21/339 ,  H01L27/00 ,  H01L27/148 ,  H01L29/762 ,  H01L29/768 ,  H01L31/12 ,  H03H11/26 ,  H04N5/335 ,  H05B33/00 ,  H01L27/04 ,  H01L29/78

CPC classification number: H01L29/76816 ,  H01L27/00 ,  H01L27/148

Abstract: A semiconductor device comprising a charge transfer device having a plurality of storage sites and a plurality of field effect transistors for reading the charge condition at a plurality of said sites. This is accomplished by locating the channels of the field effect transistors below the storage sites to be read and controlling or affecting the size of the channels by the amount of charge stored at the associated sites. Measuring the current through the channel thus indicates the charge level.

Abstract translation: 一种半导体器件，包括具有多个存储位置的电荷转移装置和用于读取多个所述位置处的充电条件的多个场效应晶体管。 这是通过将场效应晶体管的通道定位在存储位置下方以进行读取和控制，或者通过存储在相关联位置的电荷量来影响通道的大小。 通过通道测量电流表示充电电平。

公开(公告)号：US3865633A

公开(公告)日：1975-02-11

申请号：US32435773

申请日：1973-01-17

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  KERR JOHN ANTHONY

IPC: C30B31/22 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/263 ,  H01L21/265 ,  H01L7/54

CPC classification number: H01L21/00 ,  H01L21/263 ,  Y10S438/912 ,  Y10S438/916

Abstract: In order to provide a semiconductor surface layer of desired properties at a substantially constant depth from all parts of the surface, the body is subjected to bombardment with a beam of energetic particles so as to cause internal crystal damage in the layer over a controlled distance while the semiconductor is maintained at an elevated temperature causing enhanced diffusion of substrate impurities into the layer along the boundary of the damaged zone.

Abstract translation: 为了从表面的所有部分以基本恒定的深度提供具有所需特性的半导体表面层，用高能粒子束对本体进行轰击，以便在受控距离上引起层中的内部晶体损伤，同时 半导体保持在升高的温度，导致衬底杂质沿受损区域的边界增加到层中。

公开(公告)号：US3894295A

公开(公告)日：1975-07-08

申请号：US39848073

申请日：1973-09-18

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  RALPH JOHN ERNEST

IPC: H04N5/335 ,  H01J1/34 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L31/112 ,  H01L31/14 ,  H01L31/153 ,  H01L15/00

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1123 ,  H01L31/1126

Abstract: An image intensifier or converter is described comprising an array of JFETs having separate gates which when pulsed block the channel of the associated JFET. Each JFET is connected in series with a display element, such as an electroluminescent diode. Incident imaging photons absorbed in the channel regions unblock the associated FET causing radiation emission from the associated display element.

Abstract translation: 描述了一种图像增强器或转换器，其包括具有分离的栅极的JFET阵列，当脉冲阻挡相关JFET的沟道时。 每个JFET与诸如电致发光二极管的显示元件串联连接。 在通道区域中吸收的入射成像光子解除阻塞相关联的FET，从而引起来自相关显示元件的辐射。

公开(公告)号：US3887936A

公开(公告)日：1975-06-03

申请号：US39849173

申请日：1973-09-18

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  RALPH JOHN ERNEST

IPC: H01J1/34 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L31/10 ,  H01L31/112 ,  H01L31/153 ,  H01L17/00

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1123 ,  H01L31/1126

Abstract: A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections.

Abstract translation: 使用JFET作为敏感元件描述了固态辐射敏感器件。 通过使用公共导体电容耦合到JFET栅极和源极和漏极连接中的一个来实现两个端子结构。

公开(公告)号：US3653978A

公开(公告)日：1972-04-04

申请号：US3653978D

申请日：1969-03-07

Applicant: PHILIPS CORP

Inventor： ROBINSON DAVID PHYTHIAN ,  BEALE JULIAN ROBERT ANTHONY ,  SHANNON JOHN MARTIN ,  KERR JOHN ANTHONY ,  DAS MUKUNDA BEHARI

IPC: H01L21/265 ,  H01L21/76 ,  H01L21/8236 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/00 ,  H01L29/10 ,  H01L29/78 ,  H01L7/54

CPC classification number: H01L29/7838 ,  H01L21/26513 ,  H01L21/823807 ,  H01L27/0883 ,  H01L27/0925 ,  H01L29/00 ,  H01L29/1045 ,  Y10S148/053 ,  Y10S148/118 ,  Y10S148/145

Abstract: A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity profiles providing improved performance, better control over important parameters such as threshold voltage, the manufacture of improved tetrodes, and the manufacture of improved ICs using for example N- and P-channel devices, and depletion and enhancement devices combined in a single chip.

Abstract translation: 描述了制造IGFET的方法。 该方法利用杂质离子注入表面通道来确定其电导率。 这些优点包括提供改进性能的特殊杂质分布，更好地控制诸如阈值电压，改进的四极杆的制造以及使用例如N和P沟道器件的改进的IC的制造，以及组合的耗尽和增强器件 单芯片