公开(公告)号：US09536914B2

公开(公告)日：2017-01-03

申请号：US14590270

申请日：2015-01-06

Applicant: PIXART IMAGING INC.

Inventor： Sen-Huang Huang ,  Huan-Kun Pan ,  Yi-Chang Chang ,  Ching-Wei Chen

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685

Abstract: There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.

Abstract translation: 提供了具有改善的光吸收效率的前侧照明（FSI）半导体结构，其被配置为在FSI半导体结构的底部上提供反射层以增强光吸收效率，其中反射层在包装过程中制造 或半导体工艺。

公开(公告)号：US10386484B2

公开(公告)日：2019-08-20

申请号：US15956313

申请日：2018-04-18

Applicant: PixArt Imaging Inc.

Inventor： En-Feng Hsu ,  Chia-Yu Liu ,  Ching-Wei Chen

IPC: G01S17/02 ,  H01L31/0232 ,  G01S7/481

Abstract: There is provided an optical apparatus including a substrate, a light emitting device, a light sensitive device and a plurality of micro-lenses. The light emitting device is disposed on the substrate and adapted to provide a light beam. The light sensitive device is disposed on the substrate and adapted to receive a light beam reflected from an object, wherein the light sensitive device has a plurality of photosensitive units arranged in matrix. The micro-lenses are disposed above the light sensitive device and respectively opposite to the associated photosensitive units. There is further provided a light sensitive device with micro-lens and a manufacturing method thereof.

公开(公告)号：US09244541B2

公开(公告)日：2016-01-26

申请号：US14301314

申请日：2014-06-10

Applicant: PixArt Imaging Inc.

Inventor： En-Feng Hsu ,  Ching-Wei Chen ,  Chien-Sheng Chen ,  Shuen-Yin Bai ,  Chien-Jung Chou

IPC: G06F3/0354 ,  H01L27/146 ,  H04N5/359

CPC classification number: G06F3/03543 ,  G06F3/0317 ,  H01L27/14643 ,  H04N5/359

Abstract: An image sensing apparatus comprises at least one sensing pixel and a control circuit. The sensing pixel comprises: a charge storing device; a light sensing device, for respectively generating photoelectrons with a first, second amount in a first, second mode; and a switch device, for determining an amount that the photoelectron can be transmitted to the charge storing device according to a control voltage. The control voltage generates the control voltage to control the amount that the photoelectrons can be transmitted to the charge storing device to be a first charge amount in a first mode and to be a second charge amount in a second mode. The first, second charge amounts are smaller than a maximum charge storing amount for the charge storing device.

Abstract translation: 图像感测装置包括至少一个感测像素和控制电路。 感测像素包括：电荷存储装置; 用于在第一，第二模式中分别产生具有第一，第二量的光电子的光感测装置; 以及用于根据控制电压确定光电子能够传送到电荷存储装置的量的开关装置。 控制电压产生控制电压，以控制光电子能够传输到电荷存储装置的量，使其成为第一模式中的第一充电量，并且在第二模式中为第二充电量。 第一，第二充电量小于电荷存储装置的最大电荷存储量。

公开(公告)号：US20150103009A1

公开(公告)日：2015-04-16

申请号：US14301314

申请日：2014-06-10

Applicant: PixArt Imaging Inc.

Inventor： En-Feng Hsu ,  Ching-Wei Chen ,  Chien-Sheng Chen ,  Shuen-Yin Bai ,  Chien-Jung Chou

IPC: G06F3/0354

CPC classification number: G06F3/03543 ,  G06F3/0317 ,  H01L27/14643 ,  H04N5/359

Abstract: An image sensing apparatus comprises at least one sensing pixel and a control circuit. The sensing pixel comprises: a charge storing device; a light sensing device, for respectively generating photoelectrons with a first, second amount in a first, second mode; and a switch device, for determining an amount that the photoelectron can be transmitted to the charge storing device according to a control voltage. The control voltage generates the control voltage to control the amount that the photoelectrons can be transmitted to the charge storing device to be a first charge amount in a first mode and to be a second charge amount in a second mode. The first, second charge amounts are smaller than a maximum charge storing amount for the charge storing device.

Abstract translation: 图像感测装置包括至少一个感测像素和控制电路。 感测像素包括：电荷存储装置; 用于在第一，第二模式中分别产生具有第一，第二量的光电子的光感测装置; 以及用于根据控制电压确定光电子能够传送到电荷存储装置的量的开关装置。 控制电压产生控制电压，以控制光电子能够传输到电荷存储装置的量，使其成为第一模式中的第一充电量，并且在第二模式中为第二充电量。 第一，第二充电量小于电荷存储装置的最大电荷存储量。

公开(公告)号：US09989640B2

公开(公告)日：2018-06-05

申请号：US14145019

申请日：2013-12-31

Applicant: PIXART IMAGING INC.

Inventor： En-Feng Hsu ,  Chia-Yu Liu ,  Ching-Wei Chen

IPC: G01S17/02 ,  H01L31/0232 ,  G01S7/481

CPC classification number: G01S17/026 ,  G01S7/4813 ,  H01L31/02325

Abstract: There is provided an optical apparatus including a substrate, a light emitting device, a light sensitive device and a plurality of micro-lenses. The light emitting device is disposed on the substrate and adapted to provide a light beam. The light sensitive device is disposed on the substrate and adapted to receive a light beam reflected from an object, wherein the light sensitive device has a plurality of photosensitive units arranged in matrix. The micro-lenses are disposed above the light sensitive device and respectively opposite to the associated photosensitive units. There is further provided a light sensitive device with micro-lens and a manufacturing method thereof.

公开(公告)号：US09490290B2

公开(公告)日：2016-11-08

申请号：US14659956

申请日：2015-03-17

Applicant: PIXART IMAGING INC.

Inventor： Ching-Wei Chen ,  Wen-Cheng Yen

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14609 ,  H01L27/14629

Abstract: There is provided a back side illuminated semiconductor structure with a semiconductor capacitor connected to a floating diffusion node in which the semiconductor capacitor for reducing a dimension of the floating diffusion node is provided above the floating diffusion node so as to eliminate the influence thereto by incident light and enhance the light absorption efficiency.

Abstract translation: 提供了具有连接到浮动扩散节点的半导体电容器的背面照明半导体结构，其中用于减小浮动扩散节点的尺寸的半导体电容器设置在浮动扩散节点上方，以消除入射光对其的影响 并提高光吸收效率。