公开(公告)号：US20170365767A1

公开(公告)日：2017-12-21

申请号：US15628218

申请日：2017-06-20

申请人： Phononic Devices, Inc.

发明人： Jesse W. Edwards ,  Devon Newman ,  Arthur Prejs ,  Alex R. Guichard ,  Jason D. Reed ,  Kevin Shawne Schneider ,  Brian Williams ,  Robert J. Therrien

IPC分类号： H01L35/34 ,  H01L35/08 ,  H01L35/10 ,  H01L35/12

CPC分类号： H01L35/34 ,  H01L35/08 ,  H01L35/10 ,  H01L35/12

摘要： A thermoelectric device with multiple headers and a method of manufacturing such a device are provided herein. In some embodiments, a thermoelectric device includes multiple thermoelectric legs, a cold header thermally attached to the thermoelectric legs, and a hot header thermally attached to the thermoelectric legs opposite the cold header. At least one of the cold header and the hot header includes at least one score line. According to some embodiments disclosed herein, this the thermal stress on the thermoelectric device can be greatly reduced or relieved by splitting the header into multiple pieces or by scoring the header by a depth X. This enables the use of larger thermoelectric devices and/or thermoelectric devices with an increased lifespan.

公开(公告)号：US20150200098A1

公开(公告)日：2015-07-16

申请号：US14599123

申请日：2015-01-16

申请人： Phononic Devices, Inc.

发明人： Jason D. Reed ,  Jaime A. Rumsey ,  Ronald R. Hess ,  Arthur Prejs ,  Ian Patrick Wellenius ,  Allen L. Gray

IPC分类号： H01L21/283 ,  H01L35/34 ,  H01L35/02

CPC分类号： H01L21/283 ,  C23C28/021 ,  C23C28/023 ,  H01L21/02562 ,  H01L29/66068 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L33/22 ,  H01L35/02 ,  H01L35/08 ,  H01L35/16 ,  H01L35/34

摘要： Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

摘要翻译： 公开了低电阻率欧姆接触的实施例。 在一些实施例中，制造低电阻率欧姆接触的方法包括提供半导体材料层并有意地使半导体材料层变粗糙以产生特征表面粗糙度。 该方法还包括在半导体材料层的表面上提供欧姆接触金属层，并在与半导体材料层相对的欧姆接触金属层的表面上提供扩散阻挡金属层。 以这种方式，可以增加半导体材料层和欧姆接触金属层之间的粘合力。

公开(公告)号：US09218979B2

公开(公告)日：2015-12-22

申请号：US14599123

申请日：2015-01-16

申请人： Phononic Devices, Inc.

发明人： Jason D. Reed ,  Jaime A. Rumsey ,  Ronald R. Hess ,  Arthur Prejs ,  Ian Patrick Wellenius ,  Allen L. Gray

IPC分类号： H01L31/0224 ,  H01L21/44 ,  H01L21/283 ,  H01L35/02 ,  H01L35/34 ,  H01L21/02 ,  H01L29/66 ,  H01L31/0236 ,  H01L33/22 ,  C23C28/02 ,  H01L35/16

CPC分类号： H01L21/283 ,  C23C28/021 ,  C23C28/023 ,  H01L21/02562 ,  H01L29/66068 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L33/22 ,  H01L35/02 ,  H01L35/08 ,  H01L35/16 ,  H01L35/34

摘要： Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.

摘要翻译： 公开了低电阻率欧姆接触的实施例。 在一些实施例中，制造低电阻率欧姆接触的方法包括提供半导体材料层并有意地使半导体材料层变粗糙以产生特征表面粗糙度。 该方法还包括在半导体材料层的表面上提供欧姆接触金属层，并在与半导体材料层相对的欧姆接触金属层的表面上提供扩散阻挡金属层。 以这种方式，可以增加半导体材料层和欧姆接触金属层之间的粘合力。