公开(公告)号：US20040021162A1

公开(公告)日：2004-02-05

申请号：US10210031

申请日：2002-08-02

Applicant: ProMOS Technologies, Inc.

Inventor： Ting-Shing Wang

IPC: H01L027/108

CPC classification number: H01L27/10832 ,  H01L27/0207 ,  H01L27/10867 ,  H01L27/10888

Abstract: A memory device that includes a semiconductor substrate, and an array of memory cells, each cell being electrically isolated from adjacent cells and including an island formed from the substrate, the island having a top portion and at least one sidewall portion, and being spaced apart from other islands by a bottom surface on the substrate, a capacitor formed contiguous with the sidewall portion, and a transistor formed on the top portion of the island, the transistor including a gate oxide layer formed on a surface of the top portion, a gate formed on the gate oxide layer, and a first and a second diffused regions formed in the top portion, the first diffused region being spaced apart from the second diffused region.

Abstract translation: 一种存储器件，包括半导体衬底和存储器单元阵列，每个单元与相邻单元电隔离并且包括由衬底形成的岛，所述岛具有顶部部分和至少一个侧壁部分，并且间隔开 通过基板上的底面从其他岛形成与该侧壁部分相邻的电容器，以及形成在该岛的顶部的晶体管，该晶体管包括形成于顶部表面的栅极氧化层，栅极 形成在栅极氧化物层上，以及形成在顶部的第一和第二扩散区域，第一扩散区域与第二扩散区域间隔开。