公开(公告)号：US20030199135A1

公开(公告)日：2003-10-23

申请号：US10437985

申请日：2003-05-15

Applicant: ProMOS Technologies Inc.

Inventor： Yueh-Chuan Lee ,  Shih-Lung Chen ,  Jin-Shing Huang ,  Wen-Sheng Lee

IPC: H01L021/8238

CPC classification number: H01L27/10861 ,  H01L21/0217 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3144 ,  H01L27/0805

Abstract: A method of forming capacitor dielectric structure, comprising steps of providing a semiconductor substrate having at least a predetermined capacitor structure, using silicon nitride deposition to form a SiN layer on the predetermined capacitor structure, using a reoxidation process to grow an oxide layer on the SiN layer, and using a nitridation process to form a nitridation layer on the oxide layer.

Abstract translation: 一种形成电容器电介质结构的方法，包括以下步骤：提供具有至少预定电容器结构的半导体衬底，使用氮化硅沉积在预定电容器结构上形成SiN层，使用再氧化工艺在SiN上生长氧化物层 层，并且使用氮化工艺在氧化物层上形成氮化层。