公开(公告)号：US20040051183A1

公开(公告)日：2004-03-18

申请号：US10330522

申请日：2002-12-27

Applicant: Promos Technologies, Inc.

Inventor： Ming-Sheng Tung ,  Yueh-Chuan Lee

IPC: H01L023/48

CPC classification number: H01L21/76897 ,  H01L23/485 ,  H01L29/66659 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a self-aligned contact structure with a locally etched conductive layer comprises the steps of: preparing a substrate formed with gate structures comprising a first conductive layer, a second conductive layer, and an insulating layer; depositing a photoresist material layer on the substrate; performing a lithographic step with a bit-line contact node photomask or a bit-line contact photomask to expose a portion of the surface of the substrate; etching the exposed second conductive layer with an etchant; removing the remaining photoresist material layer; forming a sidewall spacer on the sidewalls of each gate structure; forming a dielectric layer to cover the substrate; and performing lithographic and etching steps to remove the dielectric layer and to form self-aligned contact structure.

Abstract translation: 用局部蚀刻的导电层形成自对准接触结构的方法包括以下步骤：制备由栅极结构形成的衬底，该栅极结构包括第一导电层，第二导电层和绝缘层; 在基板上沉积光致抗蚀剂材料层; 用位线接触节点光掩模或位线接触光掩模执行光刻步骤以暴露所述衬底表面的一部分; 用蚀刻剂蚀刻暴露的第二导电层; 去除剩余的光致抗蚀剂材料层; 在每个栅极结构的侧壁上形成侧壁间隔物; 形成介电层以覆盖基板; 并执行光刻和蚀刻步骤以去除介电层并形成自对准接触结构。

公开(公告)号：US20030199135A1

公开(公告)日：2003-10-23

申请号：US10437985

申请日：2003-05-15

Applicant: ProMOS Technologies Inc.

Inventor： Yueh-Chuan Lee ,  Shih-Lung Chen ,  Jin-Shing Huang ,  Wen-Sheng Lee

IPC: H01L021/8238

CPC classification number: H01L27/10861 ,  H01L21/0217 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3144 ,  H01L27/0805

Abstract: A method of forming capacitor dielectric structure, comprising steps of providing a semiconductor substrate having at least a predetermined capacitor structure, using silicon nitride deposition to form a SiN layer on the predetermined capacitor structure, using a reoxidation process to grow an oxide layer on the SiN layer, and using a nitridation process to form a nitridation layer on the oxide layer.

Abstract translation: 一种形成电容器电介质结构的方法，包括以下步骤：提供具有至少预定电容器结构的半导体衬底，使用氮化硅沉积在预定电容器结构上形成SiN层，使用再氧化工艺在SiN上生长氧化物层 层，并且使用氮化工艺在氧化物层上形成氮化层。