公开(公告)号：US10014424B2

公开(公告)日：2018-07-03

申请号：US14630046

申请日：2015-02-24

Applicant: Raytheon Company

Inventor： Edward P. Smith ,  Borys P. Kolasa ,  Paul M. Alcorn

IPC: H01L27/14 ,  H01L31/102 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/101

CPC classification number: H01L31/0352 ,  H01L31/09 ,  H01L31/101

Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.

公开(公告)号：US10199520B2

公开(公告)日：2019-02-05

申请号：US15997920

申请日：2018-06-05

Applicant: Raytheon Company

Inventor： Edward P. Smith ,  Borys P. Kolasa ,  Paul M. Alcorn

IPC: H01L27/14 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/101

Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.

公开(公告)号：US20180286996A1

公开(公告)日：2018-10-04

申请号：US15997920

申请日：2018-06-05

Applicant: Raytheon Company

Inventor： Edward P. Smith ,  Borys P. Kolasa ,  Paul M. Alcorn

IPC: H01L31/0352 ,  H01L31/101 ,  H01L31/09

CPC classification number: H01L31/0352 ,  H01L31/09 ,  H01L31/101

Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.

公开(公告)号：US20150263204A1

公开(公告)日：2015-09-17

申请号：US14630046

申请日：2015-02-24

Applicant: RAYTHEON COMPANY

Inventor： Edward P. Smith ,  Borys P. Kolasa ,  Paul M. Alcorn

IPC: H01L31/0352 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/0352 ,  H01L31/09 ,  H01L31/101

Abstract: A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface area smaller than the surface area of the upper one of the pair of semiconductor layers. A fill material is disposed between outer peripheral edges of the barrier layer and a region between outer peripheral edges of the first and second layers.

Abstract translation: 一种光电检测器结构，其具有设置在一对类似导电掺杂的半导体层之间的阻挡层，所述势垒层的表面积小于所述一对半导体层的上部表面积的表面积。 填充材料设置在阻挡层的外围边缘与第一和第二层的外围边缘之间的区域之间。